nanoFET Lab was designed to model dual gate transistors with quantum effects. I used the tool in a mode where I modified doping profiles and bands far away from the original intent of the simulator. I was able to confirm concept ideas of additional doping profile induced resonant tunneling concepts very rapidly without having to write my own simulator. The insight that nanoFET Lab provided was convincing enough for me to begin more detailed simulations at Texas Instruments and to ultimately develop a patent application.

R. Christopher Bowen Senior Member, Technical Staff, Texas Instruments (2008)