Anonymous @ on
I'm an electronics engineering student working on semiconductor device simulation using VisualTCAD software in my institute.
I design pn junction successfully with p uniform doping as 1*10^16 and n gaussian doping 1*10^19 and plot output IV characteristics.
Problem I m facing is in designing zener diode
1)Since zener has high doping
2) Depletion region is small
I want to know size of p-substrate and n-well and what should be doping concentration.
Thanks & Regards
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jack smith @ on
Thank you so much for this. I was into this issue and tired to tinker around to check if its possible but couldnt get it done. Now that i have seen the way you did it, thanks guys
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