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How is physics used to fabricate the barrier layer

As mention in the lecture, barrier layer can be fabricated between FTO and n-type semiconductor. How is  equation used to identify properties of the that barrier layer. If doped semiconductor is fabricated in the solar cell (eg: CIGS), is it more susceptible to light induced degradation. 

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    The equation mentioned in the question is (gamma)L=Ae-(epsilon)B,L/kBT.

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