The physical system that I am trying to reproduce is the following: an intrinsic semiconductor with a length of 400 μm to which a potential difference is applied (up to 2 V) and which is illuminated over only part of its length (the others parameters remain unchanged) and I only observe the graph "IV Characteristics". In this situation I realize two phenomena:
1. The intensity oscillates and for each voltage value we obtain two intensity values (the simplest is to use the logarithmic scale to observe it).
2. If I illuminate, for example, between 0 and 200 μm, the intensity presents an asymptotic point at V = 1 V. These divergences may appear at 0.7, 0.8, 0.9 and 1.0 V.
Are they due to numerical resolution processes?
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Adonis hena Dach @ on
system oscillates with constant-amplitude oscillation. When the value of dissipation intensity is negative, system oscillation diverges.
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