Exactly same subband energies for 2 ladders
I am simulating DG MOSCAP with Metal gates.
Metal1 and 2 WF – 4.3eV Voltage – 0 to 4 V SiO2 thickness 1 nm (100) crystal Voltage varying on both gates
In the plot for subband energies vs Voltage, the E11 is exactly overlapping with E21. THis is also seen in subband occupancy vs Vg plot.
Is that a bug with DG simulation in SCHRED?
Please Reply. Thank you.