why the duplicated charge distriboution under low bias gate is not same as the paper?
I’m trying to duplicate “ Band structure effect in silicon Nanowire electron transport” paper results for N-MOS, but I couldn’t obtain the same result.
In the case of Vg= 0, the charge dispersion graph doesn’t show the same result that Neophytos has got!
The input parameters that I have used are:
Vds= 0.5 v
Metal work function: 4.25 ev
Source and drain doping: e20 cm-3
Same dimension as you have mentioned in his paper 3×3 nm
I highly appreciate if you could let me know where my mistakes are?
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Abhijeet Paul @ on
Hello hanks for asking this question. However, to identify the reason why there is a difference, first thing is to know how much is the difference. Also the way the initial fermi-level is set in Neophytos et. al. paper is very different from the one used in Bandstructure lab. In Bandstructure lab the calculation starts from using the source drain doping and then using it for the calculation of the fermi-level. So there may be difference. How big or small is very important to know and also if the method difference can explain this difference.
I hope this helps. Abhijeet
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