%0 In Book %B Physics of Semiconductor Devices %J Physicsof Semiconductor Devices %D 2014 %T Impact Of Scaling Gate Oxide Thickness On The Performance Of Silicon Based Triple Gate Rectangular Nwfet %A Jamwal, Deepika %A Dass, D %A Prasher, R. %A Vaid, R. %I Springer %P 581-584 %U http://scholar.google.com/scholar?hl=en&q=http://link.springer.com/chapter/10.1007/978-3-319-03002-9_146&sa=X&scisig=AAGBfm1P7DLE0f5-senp-5CdvFGTz9DcKA&btnG=Search&as_sdt=0%2C15 %@ 978-3-319-03001-2 %1 10.1007/978-3-319-03002-9_146