%0 Proceedings
%B Electrical, Electronic and Computer Engineering, 2004. ICEEC'04. 2004 International Conference on
%J 2004 International Conference on Electrical, Electronic and Computer Engineering ICEEC?O4
%D 2004
%T Semi-Empirical quantum correction model for electron concentration in symmetric double gate mosfets
%A Abdolkader, T.M.
%A Fikry, Wael
%P 549-552
%U http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1374527
%Z The calculation of electron distribution of a DG- MOSFET in the literature is accomplished on three levels of accuracy and complexity. The most accurate way is to solve coupled Schrodinger and Poisson equations numerically and self-consistently. Two available simulators which perform this task are SCHRED 2.1 [4] and nanoMOS 2.5 [5]. [The Nanotechnology Simulation Hub, Online Computing for Nanotechnology, http://nanohub. purdue.edu/NanoHub/ ] This work has relied heavily on simulation facilities provided by the Network for Computational Nanotechnology \NCN) at http://nanohub.org. It came as something of a surprise to realize that I had made it into the top 50 users launching jobs on the Nanohub, but I?m sure I needed every one tools can be made available on nanohub.org to the general community. Other science gateways cater to the domains of astronomical sciences, biological sciences, chemistry and
%8 09
%@ 0-7803-8575-6
%1 10.1109/ICEEC.2004.1374527