%0 Proceedings %B Electron Devices Meeting, 2008. IEDM 2008. IEEE International %J Electron Devices Meeting, 2008. IEDM 2008. IEEE International %D 2008 %T Full-band and atomistic simulation of realistic 40 nm InAs HEMT %A Lusier, Mathieu %A Neophytou, N. %A Kharche, Neerav %A Klimeck, Gerhard %C San Francisco, CA %P 1-4 %U http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4796842&isnumber=4796592 %8 12 %@ 978-1-4244-2377-4 %1 10.1109/IEDM.2008.4796842