%0 Journal
%J Electron Device Letters
%D 2005
%T Hole transport in UTB MOSFETs in strained-Si directly on insulator with strained-Si thickness less than 5 nm
%A Aberg, Ingvar
%A Hoyt, Judy
%I IEEE
%N 9
%P 661-663
%U http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1498991
%V 26
%Z To calibrate the extraction, the effective mass was adjusted in Schred for the 30% SSDOI devices for which Tsi was known by XTEM, assuming a simplified single parabolic valence band model.
%8 09
%1 10.1109/LED.2005.853648