%0 Journal
%J IEEE Transactions on Electron Devices
%D 2005
%T Effects of substrate doping on the linearly extrapolated threshold voltage of symmetrical DG MOS devices
%A Shi, X.
%A Wong, M.
%I IEEE
%N 7
%P 1616-1621
%U http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1459127
%V 52
%Z Quantum mechanical confinement effects are studied using SCHRED, a numerical simulator for MOS capacitors. In SCHRED, a one-dimensional \1-D) Schr??dinger Equation is solved consistently with a 1-D Poisson?s Equation using Fermi?Dirac statistics. Nine unprimed and five primed subbands are included, which is adequate for room temperature operation.
%8 07
%1 10.1109/TED.2005.850622