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Practical introduction to the operation of transmission electron microscopes. Microscope design and function; imaging and diffraction modes and image content; instrument operation. Required of all students who use the TEM in their research.

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Yu Xia onto TEM Intro

Advances in theoretical methodologies and computational power in the last fifteen years have enabled the prediction of phonon properties with high resolution and fidelity. Notably, the use of molecular dynamics simulations, lattice dynamics calculations, density functional theory calculations, and the Boltzmann transport equation have led to thermal conductivity predictions in agreement with experimental measurements for a wide range of materials and a deeper understanding of the underlying...

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Odin Nido onto Simulation

The goals of this course are to give the student an understanding of the elements of semiconductor physics and principles of semiconductor devices that (a) constitute the foundation required for an electrical engineering major to take follow-on courses, and (b) represent the essential basic knowledge of the operation and limitations of the three primary electronic devices, 1) p-n junctions, 2) bipolar transistors, and 3) field effect transistors, that either an electrical engineer or a computer engineer will find useful in maintaining currency with new developments in semiconductor devices and integrated circuits in an extended career in either field.

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Odin Nido onto Simulation

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Odin Nido onto Simulation

This course will provide students with the fundamentals of computational problem-solving techniques that are used to understand and predict properties of nanoscale systems. Emphasis will be placed on how to use simulations effectively, intelligently, and cohesively to predict properties that occur at the nanoscale for real systems. The course is designed to present a broad overview of computational nanoscience and is therefore suitable for both experimental and theoretical researchers. Specific …

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Odin Nido onto Simulation

The goal of this series of lectures is to explain the critical concepts in the understanding of the state-of-the-art modeling of nanoelectronic devices such as resonant tunneling diodes, quantum wells, quantum dots, nanowires, and ultra-scaled transistors. Three fundamental concepts critical to the understanding of nanoelectronic devices will be explored: 1) open systems vs. closed systems, 2) non-equilibrium systems vs. close-to-equilibrium systems, and 3) atomistic material representation …

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Odin Nido onto Simulation

Application of Monte Carlo and Molecular Dynamics techniques in primarily classical simulations to understand and predict properties of microscopic systems in materials science, physics, biology, and chemistry. Numerical algorithms, connections between simulation results and real properties of materials (structural or thermodynamic), and statistical and systematic error estimation using real simulation programs. Simulation project comprised of scientific research, algorithm development, and …

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Odin Nido onto Simulation

THE OBJECTIVE is to learn and apply fundamental techniques used in (primarily classical) simulations in order to help understand and predict properties of microscopic systems in materials science, physics, chemistry, and biology.

THE EMPHASIS will be on connections between the simulation results and real properties of materials (structural or thermodynamic quantities), as well as numerical algorithms and systematic and statistical error estimations FOR WHOM? This class is oriented for the …

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Odin Nido onto Simulation

This course introduces first principles electronic structure calculations of materials properties and the concept of molecular dynamics (MD) simulations of materials focusing on the physics and approximations underlying the simulations and interpretation of their results.

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Odin Nido onto Simulation

This course will provide the conceptual foundation so that a student can use modern statistical concepts and tools to analyze data generated by experiments or numerical simulation.

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Mohammad Ryyan Khan onto Collection-Ryyan

Scaling of CMOS devices into the nanometer regime leads to increased processing cost. In this regard, the field of Computational Electronics is becoming more and more important because device simulation offers unique possibility to test hypothetical devices which have not been fabricated yet and it also gives unique insight into the device behavior by allowing the observation of phenomena that can not be measured on real devices. The objective of this class is to introduce the students to all semi-classical semiconductor device modeling techniques that are implemented in either commercial or publicly available software. As such, it should help students to understand when one can use drift-diffusion model and when it is necessary to use hydrodynamic, lattice heating, and even particle-based simulations. A short tutorial on using the Silvaco/PADRE simulation software is included and its purpose is to make users familiar with the syntax used in almost all commercial device simulation software.

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Обзорно по нанофотонике (2006 год)

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Sai Murali Karthik Putcha onto LearnLater

Three part lecture on metamaterials. Metamaterials are expected to open a gateway to unprecedented electromagnetic properties and functionality unattainable from naturally occurring materials, thus enabling a family of new “meta-devices”. In these three lectures, we review this new emerging field and significant progress in developing metamaterials. Specifically, we describe recently demonstrated artificial magnetism at high frequencies, including the visible part of the spectrum, negative-index in the optical range, and promising approaches along with challenges in realizing optical cloaking. The new paradigm of engineering space for light with transformation optics will be also discussed.

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Sai Murali Karthik Putcha onto LearnLater

Learn after the course in Computational Materials Science

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Sai Murali Karthik Putcha onto LearnLater

Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.

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Uttam Sahu onto study

Capacitance of a MOS device

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Uttam Sahu onto study

The goals of this course are to give the student an understanding of the elements of semiconductor physics and principles of semiconductor devices that (a) constitute the foundation required for an electrical engineering major to take follow-on courses, and (b) represent the essential basic knowledge of the operation and limitations of the three primary electronic devices, 1) p-n junctions, 2) bipolar transistors, and 3) field effect transistors, that either an electrical engineer or a computer engineer will find useful in maintaining currency with new developments in semiconductor devices and integrated circuits in an extended career in either field.

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Uttam Sahu onto study

Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of nanoscale dimensions. lecture 1 reviews traditional MOSFET theory, and Lecture 2 presents the new approach in its simplest form. Lectures 3A and 3B describe the mathematical treatment of ballistic …

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Muntasir Mahdi onto Nano Physics

From smartphones to satellites, semiconductors are everywhere. Tying together physics, chemistry, and electrical engineering, this easy-to-follow introduction provides the background needed to…

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umesh bhaskar onto aa

SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.

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Uttam Sahu onto study