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Statistical Process Control (SPC) is a set of tools used for continuous improvement and the assurance of quality in an active manufacturing process.  This learning module introduces some of the SPC tools used by technicians and engineers, including one of the most common tools – control charts.  Activities provide the opportunity to demonstrate an understanding of control charts using select data sets.

The SPC Learning Modules contains the following.


Pre-test (Knowledge…

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Stephanie Jane Siy onto Reliability Engineering

A free five-week course on the essential physics of nanoscale transistors.

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RUPAM DATTA onto NanoTransistors

By completing the MOSCap Lab in ABACUS – Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to a) understand the operation of a Metal-Oxide-Semiconductor using energy band diagrams, b) study the effects of interface traps, work function, oxide thickness, etc. on capacitance-voltage output, and c) understand MOS-C C-V characteristics in low and high frequency limits.

The specific objectives of the MOSCap Lab are:


Recommended Reading

Users who are new to the operation of MOS-Caps should consult the following resources: 1. Rober F. Pierret. (1996). Semiconductor Device Fundamentals. Reading, MA: Addison-Wesley. (See especially chapter 16) Demo

* MOSCap: First-Time User Guide * MOSCap Demonstration: MOS Capacitor Simulation Theoretical Descriptions

* Tutorial_PADRE_Simulation_Tools.pdf (tutorial) * Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor * Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage * Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance * ECE 606 Lecture 32: MOS Electrostatics I * ECE 606 Lecture 33: MOS Electrostatics II * ECE 606 Lecture 34: MOSCAP Frequency Response * MOS Capacitors: Theory and Modeling Tool Verification

* Verification of the Validity of the MOSCap Tool Examples

* MOSCAP Worked out problems (Basic) Exercises and Homework Assignments

1. Exercise for MOS Capacitors: CV curves and interface and Oxide Charges 2. Exercise: CV curves for MOS capacitors Solutions to Exercises

Solutions are provided only to instructors! Evaluation

* ABACUS: Test for MOSCAP Tool Challenge

* MOSCAP CV profiling

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Profile picture of Mary Fink

Mary Fink onto Favorites

Introduction to TCAD Simulation The existing semiconductor industry is now fundamentally built on the assumption that almost every aspect of a chip is first designed in software. Process simulation provides the ability to optimize and control the various processing steps, such as…

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Mary Fink onto Favorites

Scaling of CMOS devices into the nanometer regime leads to increased processing cost. In this regard, the field of Computational Electronics is becoming more and more important because device simulation offers unique possibility to test hypothetical devices which have not been fabricated yet and it also gives unique insight into the device behavior by allowing the observation of phenomena that can not be measured on real devices. The objective of this class is to introduce the students to all semi-classical semiconductor device modeling techniques that are implemented in either commercial or publicly available software. As such, it should help students to understand when one can use drift-diffusion model and when it is necessary to use hydrodynamic, lattice heating, and even particle-based simulations. A short tutorial on using the Silvaco/PADRE simulation software is included and its purpose is to make users familiar with the syntax used in almost all commercial device simulation software.

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Mary Fink onto Favorites

Tools for Atomic Scale Modeling

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Nathanael Farris onto MSE 410

PhysiCell demonstration of biased random cell migration

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Juliano Ferrari Gianlupi onto paul class

Thank you for considering to have your seminar or presentation taped by the nanoHUB team for online presentation. Please use this downloadable form to grant permission to record and to make your presentation available on the community website nanoHUB.org. This form may be signed or presented at the time of recording.

You as the contributor retain all copyright rights regarding your presentation materials. No transfer of copyright is implied or expressed. You are granting through license …

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Profile picture of Игорь Лопаткин

Игорь Лопаткин onto IV

Fit a general data set (or specially the phonon spectral energy density) as a Lorentzian function to obtain the peak position (or phonon frequency) and full width at half maximum (or relaxation time).

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Jason Zhang onto Phonon SED

Calculate the spectral phonon relaxation time in solids based on molecular dynamics.

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Profile picture of Jason Zhang

Jason Zhang onto Phonon SED

Thermal conductivity is an important material property which affects the performance of a wide range of devices from thermoelectrics to nanoelectronics. Information about phonon vibration modes and phonon relaxation time gives significant insight into understanding and engineering material’s thermal conductivity. Although different theoretical models have been developed for studying phonon modes and relaxation time, extensive knowledge of lattice dynamics and molecular dynamics is…

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Jason Zhang onto Phonon SED

IWCE 2015 presentation.

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Uttam Sahu onto study

A FREE five week course exploring the next generation of optical and opto-electronic systems.

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Uttam Sahu onto study

Jupyter-OOMMF (JOOMMF) integrates a popular micromagnetic package OOMMF (http://math.nist.gov/oommf/) with Python and Jupyter Notebook

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Ponsudana Muthuraj onto JOOMMF

In this talk, I will present this “spin-orbitronic” control for various magnetic systems. In particular, we will focus on the example of spin-orbit-induced manipulation of magnetic domain walls and skyrmions, i.e. particle-like magnetic configurations capable of storing and…

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Ponsudana Muthuraj onto Skyrmions

Scaling of CMOS devices into the nanometer regime leads to increased processing cost. In this regard, the field of Computational Electronics is becoming more and more important because device simulation offers unique possibility to test hypothetical devices which have not been fabricated yet and it also gives unique insight into the device behavior by allowing the observation of phenomena that can not be measured on real devices. The objective of this class is to introduce the students to all semi-classical semiconductor device modeling techniques that are implemented in either commercial or publicly available software. As such, it should help students to understand when one can use drift-diffusion model and when it is necessary to use hydrodynamic, lattice heating, and even particle-based simulations. A short tutorial on using the Silvaco/PADRE simulation software is included and its purpose is to make users familiar with the syntax used in almost all commercial device simulation software.

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Profile picture of Uttam Sahu

Uttam Sahu onto study

Basic Concepts presents key concepts in nanoelectronics and mesoscopic physics and relates them to the traditional view of electron flow in solids.

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Keshav Tiwari onto Courses

Fall 2008

This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies. The course consists of three parts. Part 1 treats silicon MOS and MOSFET fundamentals as well as second order effects such as gate leakage and quantum mechanical effects. Short channel effects, device scaling, and fabrication processes and reliability are the subject of Part 2. In Part …

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Keshav Tiwari onto Courses

quantum reflection

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deepalakshmi chandrasekaran onto qm

Machine learning and data science tools applied to materials science

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Jade Julian onto MSE 23000

This tool simulates E-k and DOS of CNTs and graphene nanoribbons.

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Yulin He onto simulation

By completing the MOSCap Lab in ABACUS – Assembly of Basic Applications for Coordinated Understanding of Semiconductors, users will be able to a) understand the operation of a Metal-Oxide-Semiconductor using energy band diagrams, b) study the effects of interface traps, work function, oxide thickness, etc. on capacitance-voltage output, and c) understand MOS-C C-V characteristics in low and high frequency limits.

The specific objectives of the MOSCap Lab are:


Recommended Reading

Users who are new to the operation of MOS-Caps should consult the following resources: 1. Rober F. Pierret. (1996). Semiconductor Device Fundamentals. Reading, MA: Addison-Wesley. (See especially chapter 16) Demo

* MOSCap: First-Time User Guide * MOSCap Demonstration: MOS Capacitor Simulation Theoretical Descriptions

* Tutorial_PADRE_Simulation_Tools.pdf (tutorial) * Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor * Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage * Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance * ECE 606 Lecture 32: MOS Electrostatics I * ECE 606 Lecture 33: MOS Electrostatics II * ECE 606 Lecture 34: MOSCAP Frequency Response * MOS Capacitors: Theory and Modeling Tool Verification

* Verification of the Validity of the MOSCap Tool Examples

* MOSCAP Worked out problems (Basic) Exercises and Homework Assignments

1. Exercise for MOS Capacitors: CV curves and interface and Oxide Charges 2. Exercise: CV curves for MOS capacitors Solutions to Exercises

Solutions are provided only to instructors! Evaluation

* ABACUS: Test for MOSCAP Tool Challenge

* MOSCAP CV profiling

0 comments 2 reposts

Profile picture of Uttam Sahu

Uttam Sahu onto study

Introduction to TCAD Simulation The existing semiconductor industry is now fundamentally built on the assumption that almost every aspect of a chip is first designed in software. Process simulation provides the ability to optimize and control the various processing steps, such as…

0 comments 6 reposts

Profile picture of Uttam Sahu

Uttam Sahu onto study