ECE 606: Solid State Devices - Professors Muhammad A. Alam and Mark Lundstrom

Offering: 01a Section: Default

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  • ECE606: Solid State Devices Lecture 30: Heterojunction Bipolar Transistor (I) 1. ECE606: Solid State Devices Le… 0
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  • Outline 2. Outline 27.066666666666666
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  • How to make a better Transistor 3. How to make a better Transisto… 103.5
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  • Heterojunction Bipolar Transistors 4. Heterojunction Bipolar Transis… 293.66666666666669
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  • Mesa HBTs 5. Mesa HBTs 394.2
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  • Applications 6. Applications 479.2
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  • Background 7. Background 557.63333333333333
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  • Outline 8. Outline 645
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  • Topic Map 9. Topic Map 654.0333333333333
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  • Bandgaps and Lattice Matching 10. Bandgaps and Lattice Matching 655.7
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  • Band Diagram at Equilibrium 11. Band Diagram at Equilibrium 820.0333333333333
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  • N-Al0.3Ga0.7As: p-GaAs (Type-I Heterojunction) 12. N-Al0.3Ga0.7As: p-GaAs (Type-I… 828
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  • Built-in Potential: Boundary Condition @Infinity 13. Built-in Potential: Boundary C… 1008.4333333333333
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  • Interface Boundary Conditions 14. Interface Boundary Conditions 1100.8333333333333
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  • Analytical Solution for Heterojunctions 15. Analytical Solution for Hetero… 1152
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  • Base Emitter Depletion Region 16. Base Emitter Depletion Region 1217.5
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  • Outline 17. Outline 1325.1666666666667
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  • P-Al0.3Ga0.7As : n-GaAs (Type I junctions) 18. P-Al0.3Ga0.7As : n-GaAs (Type … 1326.0333333333333
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  • (AlInAs/InP) Type II Junctions 19. (AlInAs/InP) Type II Junctions 1420.2
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  • N-Al0.3Ga0.7As : n-GaAs Junctions 20. N-Al0.3Ga0.7As : n-GaAs Juncti… 1473.8666666666666
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  • P-GaSb : n-InAs (Type III) 21. P-GaSb : n-InAs (Type III) 1690.7333333333334
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  • P-GaSb : n-InAs (Type III) 22. P-GaSb : n-InAs (Type III) 1713.0666666666666
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  • Conclusion 23. Conclusion 1818.6666666666667
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Lecture 30: Heterojunction Bipolar Transistors I

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