ECE 606: Solid State Devices - Professors Muhammad A. Alam and Mark Lundstrom

Offering: 01a Section: Default

Video
  • ECE606: Solid State Devices Lecture 35: MOSFET I-V Characteristics (I) 1. ECE606: Solid State Devices Le… 0
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  • Topic Map 2. Topic Map 29.333333333333332
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  • Outline 3. Outline 122.93333333333334
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  • Subthreshold Region (VG < Vth) 4. Subthreshold Region (VG < Vth) 154.16666666666666
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  • Subthreshold Region (VG < Vth) 5. Subthreshold Region (VG < Vth) 631.4
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  • Recall the definition of body coefficient (m) 6. Recall the definition of body … 1183
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  • Outline 7. Outline 1234.0333333333333
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  • Post-Threshold MOS Current (VG>Vth) 8. Post-Threshold MOS Current (VG… 1241.5333333333333
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  • Effect of Gate Bias 9. Effect of Gate Bias 1460.9333333333334
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  • The Effect of Drain Bias 10. The Effect of Drain Bias 1662.1333333333334
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  • Effect of a Reverse Bias at Drain 11. Effect of a Reverse Bias at Dr… 1704.9
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  • Inversion Charge in the Channel 12. Inversion Charge in the Channe… 1791.6666666666667
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  • Inversion Charge at one point in Channel 13. Inversion Charge at one point … 1943.7
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  • Approximations for Inversion Charge 14. Approximations for Inversion C… 2046.8666666666666
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  • The MOSFET 15. The MOSFET 2113.2
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  • Elements of Square-law Theory 16. Elements of Square-law Theory 2149.7
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  • Another view of Channel Potential 17. Another view of Channel Potent… 2211.6
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  • Square Law Theory 18. Square Law Theory 2280.3
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  • Square Law or Simplified Bulk Charge Theory 19. Square Law or Simplified Bulk … 2436.6333333333332
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  • Why does the curve roll over? 20. Why does the curve roll over? 2598.9333333333334
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  • Linear Region (Low VDS) 21. Linear Region (Low VDS) 2779.6
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  • Summary 22. Summary 2880.5333333333333
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Lecture 35: MOSFET I-V Characteristics I

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