ECE 606: Solid State Devices - Professors Muhammad A. Alam and Mark Lundstrom
Course overview Offering: 01a Section: Default
Video
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1. ECE606: Solid State Devices Le…
0
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2. Outline
45.6
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3. Warranty, product recall and o…
183.8
00:00/00:00
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4. SiO and SiH Bonds
334.33333333333331
00:00/00:00
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5. Negative Bias Temperature Inst…
616.0333333333333
00:00/00:00
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6. NBTI defined …
913.0333333333333
00:00/00:00
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7. Diffusion Distance
1094.8666666666666
00:00/00:00
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8. NIT with H diffusion
1238.8
00:00/00:00
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9. SiO Bonds
1614.8666666666666
00:00/00:00
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10. Outline
1670.2
00:00/00:00
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11. Time-dependent Bulk Trap
1672.4666666666667
00:00/00:00
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12. Dielectric Breakdown
1771.2666666666667
00:00/00:00
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13. Anode Hole Injection for Diele…
2051.9666666666667
00:00/00:00
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14. Anode Hole Injection Theory of…
2194.9333333333334
00:00/00:00
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15. Percolation Model for Dielectr…
2268.3
00:00/00:00
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16. Outline
2428.5
00:00/00:00
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17. Radiation Induced Damage
2433.1666666666665
00:00/00:00
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18. Radiation Induced Charge Build…
2553.4333333333334
00:00/00:00
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19. Summary
2667.7666666666669
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