ECE 606: Solid State Devices - Professors Muhammad A. Alam and Mark Lundstrom

Offering: 01a Section: Default

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  • ECE606: Solid State Devices Lecture 39: Reliability of MOSFET 1. ECE606: Solid State Devices Le… 0
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  • Outline 2. Outline 45.6
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  • Warranty, product recall and other facts of life 3. Warranty, product recall and o… 183.8
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  • SiO and SiH Bonds 4. SiO and SiH Bonds 334.33333333333331
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  • Negative Bias Temperature Instability Defined 5. Negative Bias Temperature Inst… 616.0333333333333
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  • NBTI defined … 6. NBTI defined … 913.0333333333333
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  • Diffusion Distance 7. Diffusion Distance 1094.8666666666666
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  • NIT with H diffusion 8. NIT with H diffusion 1238.8
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  • SiO Bonds 9. SiO Bonds 1614.8666666666666
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  • Outline 10. Outline 1670.2
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  • Time-dependent Bulk Trap 11. Time-dependent Bulk Trap 1672.4666666666667
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  • Dielectric Breakdown 12. Dielectric Breakdown 1771.2666666666667
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  • Anode Hole Injection for Dielectric Breakdown 13. Anode Hole Injection for Diele… 2051.9666666666667
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  • Anode Hole Injection Theory of TDDB 14. Anode Hole Injection Theory of… 2194.9333333333334
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  • Percolation Model for Dielectric Breakdown 15. Percolation Model for Dielectr… 2268.3
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  • Outline 16. Outline 2428.5
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  • Radiation Induced Damage 17. Radiation Induced Damage 2433.1666666666665
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  • Radiation Induced Charge Buildup 18. Radiation Induced Charge Build… 2553.4333333333334
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  • Summary 19. Summary 2667.7666666666669
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Lecture 39: Reliability of MOSFET

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