Fundamentals of Transistors

Fundamentals of Transistors

Offering: Self-Paced (2020) Section: Default

Video
  • Lecture 4.8: Unit 4 Recap 1. Lecture 4.8: Unit 4 Recap 0
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  • Unit 4 topics 2. Unit 4 topics 20.85418752085419
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  • Landauer Approach 3. Landauer Approach 33.433433433433436
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  • Landauer at low and high bias 4. Landauer at low and high bias 57.090423757090427
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  • Transmission, MFP, and diffusion coefficient 5. Transmission, MFP, and diffusi… 79.145812479145818
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  • Femi window and current flow 6. Femi window and current flow 170.40373707040374
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  • The Ballistic MOSFET 7. The Ballistic MOSFET 286.25291958625292
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  • Ballistic vs. diffusive mobility 8. Ballistic vs. diffusive mobili… 347.78111444778114
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  • Ballistic velocity vs. VDS at the VS 9. Ballistic velocity vs. VDS at … 395.06172839506172
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  • Physics of velocity saturation in ballistic MOSFETs 10. Physics of velocity saturation… 456.25625625625628
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  • Injection velocity vs. gate voltage 11. Injection velocity vs. gate vo… 565.06506506506514
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  • Transmission theory of the MOSFET 12. Transmission theory of the MOS… 653.05305305305308
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  • Linear vs. saturation region transmission 13. Linear vs. saturation region t… 707.70770770770775
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  • Alternative formulation 14. Alternative formulation 777.17717717717721
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  • Level 2 VS model 15. Level 2 VS model 838.47180513847184
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  • MVS Fits to experimental Si ETSOI data 16. MVS Fits to experimental Si ET… 864.49783116449782
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  • MVS analysis of well-tempered MOSFETs 17. MVS analysis of well-tempered … 883.81715048381716
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  • Unit 4 18. Unit 4 929.99666332999675
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L4.8 Recap

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