Events: Details

Simulation of Thermal Effects in Semiconductor Devices

Category: seminar
Description: Zlatan Aksamija talks about: Simulation of Thermal Effects in Semiconductor Devices Thermal generation in MOSFETs is seen as the ultimate limit to scaling. Thermal management solutions such as heat sinks are not sufficient to deal with heat generation in future integrated circuits based on aggressively scaled silicon MOSFET devices. Future designs will require a multi-physics electro-thermal approach. This, in turn, requires us to understand phonon generation and transport in order to couple proven device simulation to thermal transport. We present results for a 50nm channel silicon MOSFET. We couple 3-dimensional Monte Carlo device simulation to Boltzmann Transport equation and Heat equation phonon transport and explore the effects of Joule heating in this device. We also examine non-equilibrium optical phonons and bottlenecks to thermal transport. Healthy Refreshments. Sponsored by Network for Computational Nanotechnology at Illinois and (NCN@Illinois) -Nahil A. Sobh NCN and Site-Lead Lead Scientist University of Illiinois at Urbana-Champaign CEE, MechSE, NCSA, NCN, Beckman 1250 MNTL office (217) 244 9481
When: Wednesday 25 February, 2009, 5:00 pm - 6:00 pm GMT
Where: Univ. of Illinois at Urbana-Champaign, in MNTL room 100
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