ACUTE - Assembly for Computational Electronics
Atomistic Modeling
NEMO3D in ACUTE
NEMO3D in ACUTE calculates eigenstates in (almost) arbitrarily shaped semiconductor structures in the typical column IV and III-V materials. Atoms are represented by the empirical tight binding model using s, sp3s*, or sp3d5s* models with or without spin. Strain is computed using the classical valence force field (VFF) with various Keating-like potentials.
Users of NEMO3D in ACUTE can analyze quantum dots, alloyed quantum dots, long-range strain effects on quantum dots, the effects of wetting layers, piezo-electric effects in quantum dots, quantum-dot nuclear-spin interaction, quantum-dot phonon spectra, coupled quantum-dot systems, miscut silicon quantum wells with silicon-germanium alloy buffers, core-shell nanowires, alloyed nanowires, phosphorous impurities in silicon (P:Si qubits), and buck alloys.
Boundary conditions to treat the effects of surface states have been developed. Direct and exchange interactions and interactions with electromagnetic fields can be computed in a post-processing approach based on the NEMO 3D single particle states.
Exercises: