ACUTE - Assembly for Computational Electronics
Bulk Monte Carlo Lab in ACUTE
The Bulk Monte Carlo Lab in ACUTE calculates the bulk values of the electron drift velocity, electron average energy, and electron mobility for electric fields applied in arbitrary crystallographic direction in both column 4 (silicon and germanium) and III-V (gallium arsenide, silicon carbide and gallium nitride) materials. All relevant scattering mechanisms for the materials being considered have been included in the model.
Detailed derivation of the scattering rates for most of the scattering mechanisms included in the model can be found on Prof. Vasileska personal web-site (look under class EEE534 Semiconductor Transport). Description of the Monte Carlo method used to solve the Boltzmann Transport Equation and implementation details of the tool are given in the
Bulk Monte Carlo Code Described
An A/V presentation is also available:
Ensemble Monte Carlo Method Described
that gives more insight on the implementation details of the Ensemble Monte Carlo technique for the solution of the Boltzmann Transport Equation. Examples of simulations that can be performed with this tool are given below:
Consistent Parameter Set for an Ensemble Monte Carlo Simulation of 4H-SiC
- Homework Assignment for Bulk Monte Carlo Lab: Velocity vs. Field for Arbitrary Crystallographic Orientations
- Homework Assignment for Bulk Monte Carlo Lab: Temperature Dependence of the Low Field Mobility for  Orientation
Quamc2D Lab in ACUTE
QuaMC 2D (pronounced “quam-see”) is a quasi three-dimensional quantum-corrected semi-classical Monte-Carlo transport simulator for conventional and non-conventional MOSFET devices.
A parameter-free quantum field approach has been developed and utilized quite successfully in order to capture the size-quantization effects in nanoscale MOSFETs. The method is based on a perturbation theory around thermodynamic equilibrium and leads to a quantum field-formalism in which the size of an electron depends upon its energy. This simulator uses different self-consistent event-biasing schemes for statistical enhancement in the Monte-Carlo device simulations. Enhancement algorithms are especially useful when the device behavior is governed by rare events in the carrier transport process. A bias technique, particularly useful for small devices, is obtained by injection of hot carriers from the boundaries. Regarding the Monte Carlo transport kernel, the explicit inclusion of the longitudinal and transverse masses in the silicon conduction band is realized in the program using the Herring-Vogt transformation. Intravalley scattering is limited to acoustic phonons. For the intervalley scattering, both g- and f-phonon processes have been included.
- How Quantum-Mechanical Space-Quantization is Implemented in Schred, Drift-Diffusion (SILVACO ATLAS) and Particle-Based Device Simulators (Quamc2D)
Thermal Particle-Based Device Simulator
Exercises and Other Resources: