Recursive Green’s Function Method for Modeling RTD’s

in preparation.

nanoMOS in ACUTE

nanoMOS in ACUTE is a two-dimensional simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. Five transport models is available (drift-diffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the confinement direction exactly, and the names indicate the technique used to account for carrier transport along the channel. Each of these transport models is solved self-consistently with Poisson’s equation. Several internal quantities such as subband profiles, subband areal electron densities, potential profiles, and current-voltage (I/V) information can be obtained from the source code.

NanoMOS 3.0 includes an improved treatment of carrier scattering. Some important information about nanoMOS in ACUTE can be found on the following links:

• Introduction to nanoMOS

• NanoMOS 3.0: First-Time User Guide

CBR

in preparation.