Coral Name: STS_AOE
FIC: Dimitrios Peroulis
Process/Equipment Owner: Sean Rinehart
Location: Cleanroom-Bay L
Max Wafer Size: 4
This system is used to dry etch dielectrics, metals, and polymer films.
The STS AOE Deep Reactive Ion Etch (DRIE) system uses SF6, CF4, C4F8, Ar, O2 and He gases. It is designed to provide high-aspect-ratio etching using inductive coupled plasma (ICP). Utilizes weighted clamp which masks 1/4" of the wafer perimeter.
Photo resist, silicon, silicon nitride, silicon oxide, Ni, Cr, and Al can be used as a mask.
4” silicon wafer can only be loaded in the system, so for any wafer which less than 4” you will need to bond to a 4” carrier wafer. Use thick photo resist such as AZ 4620 or AZ 9260 following a hard bake in a 120C oven for at least 15-30min. You can also use “Crystalbond 555” adhesive for mounting your wafer to the 4” wafer.
Please make sure that your wafer is properly bonded to the 4” carrier wafer.
When bonding, make sure that there is not any photo resist on the backside of the carrier. This causes poor backside cooling and/or high helium leak rates.
It is recommended to do oxygen cleaning for 15min before starting your process in order to clean the process chamber.
* Must install Coral and be a trained user to reserve a slot on this system.