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Ultra-High Mobility GaAs MBE

Equipment home > Imaging > Ultra-High Mobility GaAs MBE

General Information:

FIC: Michael Manfra
Process/Equipment Owner: Geoff Gardner
Location: BNC 2217

System Information:

General Description:

The Veeco GenII Molecular Beam Epitaxy (MBE) System is capable of growing on 2" substrates. This MBE has traditional features such as a Load Lock chamber and Reflective High Energy Electron Diffraction (RHEED). This MBE also has custom features such as enhanced pumping capacity, all metal valves, dedicated wafer outgassing buffer chamber and custom sources. Source materials include, As, In, Al, and Ga. There are also S and C sources for doping. Advanced control software allows for growth automation and repeatable complex structures such as super lattices.

Materials Compatibility:

Check with Michael Manfra


This tool has restricted use policies. However samples and structures can be considered for fabrication on an individual basis.

Useful Links:

* Must install Coral and be a trained user to reserve a slot on this system.