Upcoming reboots on Thursday, October 27th, will cause tool sessions to be lost. Sorry for any inconvenience.
Professor of Electrical and Computer Engineering
B.S., Electrical Engineering, Fudan University China - 1988; Ph.D., Physics, Max-Planck-Insitute for Solid State Research Germany - 1996
Semiconductor physics and devices, Nano-structures and nano-fabrications, Quantum/spin-transport, Atomic layer deposition (ALD), High-k/III-V device integration, High-performance III-V MOSFETs, III-V FinFETs, High-k/graphene integration, High-performance graphene FETs, Graphene spintronics, ALD for solar applications
Our research group specializes in atomic layer deposition technique and its integration on semiconductor materials. ALD is a surface controlled layer-by layer process for the deposition of thin films with atomic layer accuracy. ALD high-k Hf-oxide has replaced SiO2 at 65 nm node Si CMOS digital ICs. We are investigating ALD high-k integration on GaAs, InGaAs, InAs, InP, GaP, GaSb, InSb, GaN, AlGaN, InGaN, SiC, Ge and graphene. The potential impact of our research is to identify the real high-mobility channel materials for the 15 nm node of CMOS technology in 2015-2017.