Due to local system maintenance on Tuesday, September 27th, nanoHUB will be unable to launch simulation jobs on clusters conte, rice, carter, and hansen. We apologize for any inconvenience.
Professor of Electrical and Computer Engineering
B.S., Electrical Engineering, Fudan University China - 1988; Ph.D., Physics, Max-Planck-Insitute for Solid State Research Germany - 1996
Semiconductor physics and devices, Nano-structures and nano-fabrications, Quantum/spin-transport, Atomic layer deposition (ALD), High-k/III-V device integration, High-performance III-V MOSFETs, III-V FinFETs, High-k/graphene integration, High-performance graphene FETs, Graphene spintronics, ALD for solar applications
Our research group specializes in atomic layer deposition technique and its integration on semiconductor materials. ALD is a surface controlled layer-by layer process for the deposition of thin films with atomic layer accuracy. ALD high-k Hf-oxide has replaced SiO2 at 65 nm node Si CMOS digital ICs. We are investigating ALD high-k integration on GaAs, InGaAs, InAs, InP, GaP, GaSb, InSb, GaN, AlGaN, InGaN, SiC, Ge and graphene. The potential impact of our research is to identify the real high-mobility channel materials for the 15 nm node of CMOS technology in 2015-2017.