## ECE 305: Semiconductor Devices, Profs. Lundstrom and Alam

### Overview

**Spring 2016:**

**Instructors:**

**Office Hours: Tues/Thurs 4:30 - 5:30 PM Wang Hall 3055**

(or make an appointment by e-mail to see me MWF 8:30 - 9:30 AM)

M.A. Alam (alam at purdue dot edu)

**Office Hours: MWF 9:30 - 10:30 AM Wang Hall 3051**

**Teaching Assistant:**Lingming Yang (yang729 at purdue dot edu)

In addition to office hours, students are encouraged to make use of the ECE Spring 2016

__Piazza Discussion Forum__

__Course Announcements__

**Thank you for joining us in ECE-305 this spring. **

## Course Description

This course is about semiconductors and semiconductor devices, in particular: 1) the PN junction, 2) the metal-oxide-semiconductor field-effect transistor (MOSFET), and 2) the bipolar junction transistor (BJT). The course is divided into three parts. The first part treats semiconductor fundamentals (energy bands, electrons and holes, the Fermi function), doping and carrier densities, carrier transport and generation-recombination, and the semiconductor equations, which provide a complete, mathematical description of electrons and holes in semiconductors, subject to some important simplifying assumptions. The second part of the course applies these concepts to PN junctions and PN junction devices, and the third part treats the dominant electronic device today, the metal-oxide-semiconductor field-effect transistor (MOSFET) as well as the bipolar junction transistor, another important device.

The course covers a lot of ground, but it provides a basic understanding of semiconductors and devices for those interested in circuits and applications, and a starting point for further studies, for those who intend to focus on electronic materials and devices.

For a useful collection of practice exams, see Prof. Robert Pierret's __collection of exams__ for Semiconductor Device Fundamentals.

Students interested in more advanced treatments of the topics discussed in 305, should see the graduate version of this course, __ECE 606. __

The course homepage provides complete information about this course and will be used for posting weekly reading assignments, homework assignments and solutions, supplemental material, announcements, etc.

## Lecture Format:

Students are expected to read assigned material prior to class. Most class sessions will include a short quiz. Class periods will be devoted to an overview of the assigned reading topics, questions, answers, discussions, etc.

## Grading:

The course grade is based on a total of 500 points from exams. Up to 50 extra points from in-class quizzes are also available.

There are six exams for the course. The lowest one of Exams 1-5 will be dropped. **Exam 6 (the final) is required and may not be dropped.** There is a total of 500 points exam points available for the course. In addition, up to 50 points can be earned from the in-class quizzes. Exams are closed book, but a formula sheet will be provided. You should bring a calculator. Following the ECE policy, the calculator must be a Texas Instruments TI-30X IIS scientific calculator.

Exams (6, each worth 100 points, the lowest one of Exams 1-5 will be dropped)

Exam 1: Thurs. 1/28, PHYS 112, 6:30 PM - 7:30 PM

Exam 2: Mon. 2/15, PHYS 112, 8:00-9:00 PM

Exam 3: Thurs. 3/3, RHPH 172, 6:30-7:30 PM

Exam 4: Mon. 3/28, PHYS 112, 8:00-9:00 PM

Exam 5: Mon. 4/18, PHYS 112, 8:00-9:00 PM

Exam 6: (Final Exam): Date, time, and location to be determined.

**Quizzes** will be conducted in class. The normalized total quiz score maximum is 50 points. If your total quiz score is at least 80% of the possible score, you will receive the full 50 points.

**You MUST take all exams.** Each exam will have a maximum normalized score of 100 points..

Note that the Final Exam will be in the same format and of the same length as Exams 1-5. The final exam (Exam 6) MAY NOT BE DROPPED. It is not comprehensive - it covers BJTs.

**Homework**

Homework will be assigned weekly and solutions will be posted. Homework will not be graded, but the exams will be closely related to the homework assignments. You are strongly encouraged to work the assigned HW BEFORE the solutions are posted.

**Total course score:** Your highest four exam scores from Exams 1-5 will be added to your Exam 6 score. The maximum total is 500 points, and the class curve will be based on 500 total points. Your quiz score (up to 50 additional extra points), will be added to your total exam score. Students with more than 500 total points will earn an A+.

The plus/minus grading system will be used when assigning final grades.

**ECE 305 Honors:** Students interested in earning honors credit for ECE 305 should contact Prof. Lundstrom or Prof. Alam.

**Class announcements will supersede prior written information and will be posted on the course homepage**

**Campus Emergency Policies:** In the event of a major campus emergency, course requirements, deadlines and grading percentages are subject to changes that may be necessitated by a revised semester calendar or other circumstances. Information about changes will be posted on the course web page and available from lundstro@purdue.edu

## ECE 305 Spring 2016 Week by Week Course Schedule

All reading assignments are from: *Semiconductor Device Fundamentals*, R.F. Pierret (which is referred to below as SDF)

**Jan. 11: WEEK 1: Material properties**

Reading Assignment: SDF, pp. 3-19, 23-32

Topics: General material properties, crystal lattices, crystal growth, quantization, semiconductor models

Week 1 Quiz

Week 1 Quiz Answers

Week 1 Homework Assignment

Week 1 Homework Solutions

Week 1: References and Supplementary Information:

Introduction to ECE 305 Spring 2015 (Lundstrom)

Materials Properties 1

Materials Properties 2

**Jan. 19: WEEK 2: Carrier properties**

Reading Assignment: SDF, pp. 32-49

Topics: Carrier properties (charge, effective mass, intrinsic and extrinsic carrier densities), density of states, carrier distributions.

Week 2 Quiz

Week 2 Quiz Answers

Week 2 Homework Assignment

Week 2 Homework Solutions

Week 2: References and Supplementary Information:

Carrier Properties I

Carrier Properties II

**Jan 25: WEEK 3: Equilibrium carrier concentrations**

Reading Assignment: SDF, pp. 49-67

Topics: Equilibrium carrier concentrations

Week 3 Quiz

Week 3 Quiz Answers

Week 3 Homework Assignment

Week 3 Homework Solutions

Equilibrium Carrier Concentrations

**Exam 1:
Thursday, Jan. 28, PHYS 112, 6:30-7:30 PM **

Exam 1 Goals

ECE 305 Key Equations

Practice Exam 1

Practice Exam 1 Solutions

**Feb. 1: WEEK 4: Carrier Action and the Semiconductor equations**

Reading Assignment: SDF, pp. 75-124

Topics: Drift, mobility band bending, carrier diffusion, the Einstein relationship recombination-generation, equations of state

Week 4 Quiz

Week 4 Quiz Answers

Week 4 Homework Assignment

Week 4 Homework Solutions

Week 4: References and Supplementary Information:

Carrier Action I

Carrier Action II

The Semiconductor Equations

**Feb. 8: WEEK 5: MCDE, Diffusion lengths, and quasi-Fermi levels**

Reading Assignment: SDF, pp. 124-134

Topics: Minority carrier diffusion equation, Diffusion lengths, quasi-Fermi levels

Week 5 Quiz

Week 5 Quiz Answers

Week 5 Homework Assignment

Week 5 Homework Solutions

Semiconductor Equations II

The MCDE

**Exam 2:
Monday, 2/15, PHYS 112, 8:00-9:00 PM **

Exam 2 Goals

ECE 305 Key Equations for Exam 2

Practice Exam 2

Practice Exam 2 Solutions

**Feb. 15: WEEK 6: PN Diodes I**

Reading Assignment: SDF, pp. 149-174, 195-209

Topics: PN diode fabrication and physical properties. PN diode equilibrium electrostatics (basics)

Week 6 Quiz

Week 6 Quiz Answers

Week 6 Homework Assignment

Week 6 Homework Solutions

Week 6: References and Supplementary Information:

Device Fabrication and Intro to PN Junctions I

Intro to PN Junctions II

**Feb. 22: WEEK 7: PN Diodes II**

Reading Assignment: SDF, pp. 209-223, 235-259

Topics: PN diode electrostatics (quantitative). IV characteristics ideal diode

Week 7 Quiz

Week 7 Quiz Answers

Week 7 Homework Assignment

Week 7 Homework Solutions

Week 7: References and Supplementary Information:

Depletion Approximation

Ideal Diode Equation

Ideal Diode Equation II and Intro to Solar Cells

**Feb. 29: WEEK 8: PN Diodes III**

Reading Assignment: SDF, pp. 260-270, 270-281, 301-324

Topics: Deviations from ideal and small signal model

Week 8 Quiz 1

Week 8 Quiz Answers

Week 8 Homework Assignment

Week 8 Homework Solutions

Solar Cells and Non-ideal Diodes

Small Signal Model

**Exam 3:
Thursday, 3/3, RHPH 172 (Note: not PHYS building!), 6:30-7:30 PM **

Exam 3 Goals

ECE 305 Key Equations for Exam 3

Practice Exam 3

**Mar. 7: WEEK 9: MS Diodes**

Reading Assignment: SDF, pp. 477-501

Topics: Ideal MS junctions, Energy band diagrams,electrostatics, IV characteristics. a.c. response, ohmic contacts

Week 9 Quiz

Week 9 Quiz Answers

Week 9 Homework Assignment

Week 9 Homework Solutions

Week 9: References and Supplementary Information:

MS Diodes: E-bands and Vbi

MS Diodes: Electrostatics

MS Diodes: IV Characteristics and SS Model

**March 14 - March 19 SPRING BREAK**

**Mar. 21: WEEK 10: Optoelectronic Diodes**

Reading Assignment: SDF, pp. 347-368

Topics: MS d.c. and A.C. current and optoelectronic diodes

Week 10 Quiz

Week 10 Quiz Answers

Week 10 Homework Assignment

Week 10 Homework Solutions

Week 10: References and Supplementary Information:

Optoelectronic Devices

**Exam 4:
Monday 3/28, PHYS 112, 8:00-9:00 PM **

Exam 4 Goals

ECE 305 Key Equations for Exam 4

Practice Exam 4

Practice Exam 4 Solutions

**Mar. 28: WEEK 11: MOS Fundamentals**

Reading Assignment: SDF, pp. 525-530, 563-599

Topics: MOS-fundamentals, ideal structures and electrostatics, MOS Capacitance-Voltage

Week 11 Quiz

Week 11 Quiz Answers

Week 11 Homework Assignment

Week 11 Homework Solutions

Week 11: References and Supplementary Information:

MOS Fundamentals

Bandbending and Depletion Approximation

Gate Voltage and MOS Capacitance vs.Voltage

**Apr. 4: WEEK 12: MOS IV**

Reading Assignment: Lecture Notes on MOSFETS + SDF, pp. 611-623

Week 12 Quiz

Week 12 Quiz Answers

Week 12 Homework Assignment

Week 12 Homework Solutions

Week 12: References and Supplementary Information:

Lecture Notes on MOSFETs

MOSFET Introduction

MOSFET Device Metrics

Energy Band Treatment of MOSFETs

MOSFET IV Characteristics

**Apr. 11: WEEK 13: Non-Ideal MOS**

Reading Assignment: SDF, pp. 645-673

Topics: Nonideal MOS capacitors

Week 13 Quiz

Week 13 Quiz Answers

Week 13 Homework Assignment

Week 13 Homework Solutions

Week 13: References and Supplementary Information:

MOSFET Wrap-up

**Exam 5:
Monday, 4/18, PHYS 112, 8:00-9:00 PM **

Exam 5 Goals

ECE 305 Key Equations for Exam 5

Practice Exam 5

Practice Exam 5 Solutions

**Apr. 18: WEEK 14: Bipolar Junction Transistors**

Reading Assignment: SDF, pp. 371-426

Topics: Bipolar transistor fundamentals and deviation from ideal

Week 14 Quiz

Week 14 Quiz Answers

Week 14 Homework Assignment

Week 14 Homework Solutions

Week 14: References and Supplementary Information:

Introduction to BJTs

Current Voltage Characteristics

Current Voltage Characteristics: Part 2

**Apr. 25: WEEK 15: Modern BJTs and Small-Signal Model**

Reading Assignment: SDF, pp. 426-433, 443-449

Topics: Modern BJTs, HBTs, small-signal models, comparison to MOSFETs

Week 15 Quiz

Week 15 Quiz Answers

Week 15 Homework Assignment

Week 15 Homework Solutions

Week 15: References and Supplementary Information:

Ebers-Moll Model

BJT Wrap-up

**Exam 6: Final exam: date TBD**

Exam 6 (Final Exam) Goals

ECE 305 Key Equations for Exam 6

Practice Exam 6

Practice Exam 6 Solutions