(or make an appointment by e-mail to see me MWF 8:30 - 9:30 AM)
M.A. Alam (alam at purdue dot edu)
In addition to office hours, students are encouraged to make use of the ECE Spring 2016 Piazza Discussion Forum
Thank you for joining us in ECE-305 this spring.
This course is about semiconductors and semiconductor devices, in particular: 1) the PN junction, 2) the metal-oxide-semiconductor field-effect transistor (MOSFET), and 2) the bipolar junction transistor (BJT). The course is divided into three parts. The first part treats semiconductor fundamentals (energy bands, electrons and holes, the Fermi function), doping and carrier densities, carrier transport and generation-recombination, and the semiconductor equations, which provide a complete, mathematical description of electrons and holes in semiconductors, subject to some important simplifying assumptions. The second part of the course applies these concepts to PN junctions and PN junction devices, and the third part treats the dominant electronic device today, the metal-oxide-semiconductor field-effect transistor (MOSFET) as well as the bipolar junction transistor, another important device.
The course covers a lot of ground, but it provides a basic understanding of semiconductors and devices for those interested in circuits and applications, and a starting point for further studies, for those who intend to focus on electronic materials and devices.
For a useful collection of practice exams, see Prof. Robert Pierret's collection of exams for Semiconductor Device Fundamentals.
Students interested in more advanced treatments of the topics discussed in 305, should see the graduate version of this course, ECE 606.
The course homepage provides complete information about this course and will be used for posting weekly reading assignments, homework assignments and solutions, supplemental material, announcements, etc.
Students are expected to read assigned material prior to class. Most class sessions will include a short quiz. Class periods will be devoted to an overview of the assigned reading topics, questions, answers, discussions, etc.
The course grade is based on a total of 500 points from exams. Up to 50 extra points from in-class quizzes are also available.
There are six exams for the course. The lowest one of Exams 1-5 will be dropped. Exam 6 (the final) is required and may not be dropped. There is a total of 500 points exam points available for the course. In addition, up to 50 points can be earned from the in-class quizzes. Exams are closed book, but a formula sheet will be provided. You should bring a calculator. Following the ECE policy, the calculator must be a Texas Instruments TI-30X IIS scientific calculator.
Exams (6, each worth 100 points, the lowest one of Exams 1-5 will be dropped)
Exam 1: Thurs. 1/28, PHYS 112, 6:30 PM - 7:30 PM
Exam 2: Mon. 2/15, PHYS 112, 8:00-9:00 PM
Exam 3: Thurs. 3/3, RHPH 172, 6:30-7:30 PM
Exam 4: Mon. 3/28, PHYS 112, 8:00-9:00 PM
Exam 5: Mon. 4/18, PHYS 112, 8:00-9:00 PM
Exam 6: (Final Exam): Date, time, and location to be determined.
Quizzes will be conducted in class. The normalized total quiz score maximum is 50 points. If your total quiz score is at least 80% of the possible score, you will receive the full 50 points.
You MUST take all exams. Each exam will have a maximum normalized score of 100 points..
Note that the Final Exam will be in the same format and of the same length as Exams 1-5. The final exam (Exam 6) MAY NOT BE DROPPED. It is not comprehensive - it covers BJTs.
Homework will be assigned weekly and solutions will be posted. Homework will not be graded, but the exams will be closely related to the homework assignments. You are strongly encouraged to work the assigned HW BEFORE the solutions are posted.
Total course score: Your highest four exam scores from Exams 1-5 will be added to your Exam 6 score. The maximum total is 500 points, and the class curve will be based on 500 total points. Your quiz score (up to 50 additional extra points), will be added to your total exam score. Students with more than 500 total points will earn an A+.
The plus/minus grading system will be used when assigning final grades.
ECE 305 Honors: Students interested in earning honors credit for ECE 305 should contact Prof. Lundstrom or Prof. Alam.
Class announcements will supersede prior written information and will be posted on the course homepage
Campus Emergency Policies: In the event of a major campus emergency, course requirements, deadlines and grading percentages are subject to changes that may be necessitated by a revised semester calendar or other circumstances. Information about changes will be posted on the course web page and available from email@example.com
ECE 305 Spring 2016 Week by Week Course Schedule
All reading assignments are from: Semiconductor Device Fundamentals, R.F. Pierret (which is referred to below as SDF)
Jan. 11: WEEK 1: Material properties
Reading Assignment: SDF, pp. 3-19, 23-32
Topics: General material properties, crystal lattices, crystal growth, quantization, semiconductor models
Jan. 19: WEEK 2: Carrier properties
Reading Assignment: SDF, pp. 32-49
Topics: Carrier properties (charge, effective mass, intrinsic and extrinsic carrier densities), density of states, carrier distributions.
Jan 25: WEEK 3: Equilibrium carrier concentrations
Reading Assignment: SDF, pp. 49-67
Topics: Equilibrium carrier concentrations
Thursday, Jan. 28, PHYS 112, 6:30-7:30 PM
Feb. 1: WEEK 4: Carrier Action and the Semiconductor equations
Reading Assignment: SDF, pp. 75-124
Topics: Drift, mobility band bending, carrier diffusion, the Einstein relationship recombination-generation, equations of state
Feb. 8: WEEK 5: MCDE, Diffusion lengths, and quasi-Fermi levels
Reading Assignment: SDF, pp. 124-134
Topics: Minority carrier diffusion equation, Diffusion lengths, quasi-Fermi levels
Semiconductor Equations II
Monday, 2/15, PHYS 112, 8:00-9:00 PM
Feb. 15: WEEK 6: PN Diodes I
Reading Assignment: SDF, pp. 149-174, 195-209
Topics: PN diode fabrication and physical properties. PN diode equilibrium electrostatics (basics)
Feb. 22: WEEK 7: PN Diodes II
Reading Assignment: SDF, pp. 209-223, 235-259
Topics: PN diode electrostatics (quantitative). IV characteristics ideal diode
Feb. 29: WEEK 8: PN Diodes III
Reading Assignment: SDF, pp. 260-270, 270-281, 301-324
Topics: Deviations from ideal and small signal model
Solar Cells and Non-ideal Diodes
Small Signal Model
Thursday, 3/3, RHPH 172 (Note: not PHYS building!), 6:30-7:30 PM
Mar. 7: WEEK 9: MS Diodes
Reading Assignment: SDF, pp. 477-501
Topics: Ideal MS junctions, Energy band diagrams,electrostatics, IV characteristics. a.c. response, ohmic contacts
Mar. 21: WEEK 10: Optoelectronic Diodes
Reading Assignment: SDF, pp. 347-368
Topics: MS d.c. and A.C. current and optoelectronic diodes
Week 10: References and Supplementary Information:
Monday 3/28, PHYS 112, 8:00-9:00 PM
Mar. 28: WEEK 11: MOS Fundamentals
Reading Assignment: SDF, pp. 525-530, 563-599
Topics: MOS-fundamentals, ideal structures and electrostatics, MOS Capacitance-Voltage
Apr. 4: WEEK 12: MOS IV
Reading Assignment: Lecture Notes on MOSFETS + SDF, pp. 611-623
Week 12: References and Supplementary Information:
Lecture Notes on MOSFETs
Apr. 11: WEEK 13: Non-Ideal MOS
Reading Assignment: SDF, pp. 645-673
Topics: Nonideal MOS capacitors
Week 13: References and Supplementary Information:
Monday, 4/18, PHYS 112, 8:00-9:00 PM
Apr. 18: WEEK 14: Bipolar Junction Transistors
Reading Assignment: SDF, pp. 371-426
Topics: Bipolar transistor fundamentals and deviation from ideal
Apr. 25: WEEK 15: Modern BJTs and Small-Signal Model
Reading Assignment: SDF, pp. 426-433, 443-449
Topics: Modern BJTs, HBTs, small-signal models, comparison to MOSFETs