Learn about the fundamentals of nanoelectronics in a set of broadly accessible short courses. Selected semester courses in the nanoHUB-U format are also available at nanoHUB-U.
Annual summer schools address nanoelectronics from science to circuits and systems. (2015 Summer School on Uncertainty Quantification is now available.)
This workshop presented a tutorial introduction to the Matlab-based compact model development platform being developed at UC Berkeley.
Compact models must get the physics right, work reliably over bias, geometry, and temperature, interact properly with the circuit simulators in which they are implemented, run efficiently, and follow impeccable software development practices. This workshop will be a detailed deep-dive into an industrial strength Verilog-A code for the R3 model for JFETs, diffused resistors, and polysilicon resistors. Do not think that a “resistor” is a trivially simple device to model: real resistors are affected by depletion pinching, velocity saturation, and self-heating, and to properly account for all of these effects, while ensuring no unphysical model behavior, is not trivial. But it is not as complex as a complete MOS or bipolar transistor model – so is ideal as a training vehicle for compact modeling.
Seminar series on a variety of topics in nanotechnology – from materials to compact models to circuits, systems, and applications.
ECE 670: Landau Electronics (2015)
Seminars on a variety of topics in nanotechnology – from materials to compact models to circuits, systems, and applications.
The MVS Nanotransistor Model: A Primer (Lundstrom)
Xyce – An Open Source SPICE Engine (Keiter)
Silicon MEMS + Photonic Systems (Bhave)
RF Solid-State Vibrating Transistors (Weinstein)
Forum on the Future of Electronics (Mark Lundstrom, Supriyo Datta, Gerhard Klimeck, Muhammad Alam, Timothy S Fisher)
|Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices||Raseong Kim|
|Landauer Approach to Thermoelectrics||Changwook Jeong|
|III-V Nanoscale MOSFETS: Physics, Modeling, and Design||Yang Liu|
|Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic||Himadri Pal|
|Quantum and Atomistic Effects in Nanoelectronic Transport Devices||Neophytos Neophytou|
|Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices||Siyu Koswatta|
|Electron Phonon Interaction in Carbon Nanotube Devices||Sayed Hasan|
|Exploring New Channel Materials for Nanoscale CMOS||Anisur Rahman|
|Device Physics and Simulation of Silicon Nanowire Transistors||Jing Wang|
|Carbon Nanotube Electronics: Modeling, Physics, and Applications||Jing Guo|
|Modeling Quantum Transport in Nanoscale Transistors||Ramesh Venugopal|
|Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors||Jung-Hoon Rhew|
|Nanoscale MOSFETS: Physics, Simulation and Design||Zhibin Ren|
|Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S||Carl R. Huster|
|Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices||Kausar Banoo|
|Computational and Experimental Study of Transport in Advanced Silicon Devices||Farzin Assad|
|Exams for Semiconductor Device Fundamentals||Robert F. Pierret|
|Semiconductor Device Fundamentals Testbook Module A: Semiconductor Basics||Robert F. Pierret|
|Semiconductor Device Fundamentals Testbook Module B: Diode Basics||Robert F. Pierret|
|Semiconductor Device Fundamentals Testbook Module C: Transistor Basics||Robert F. Pierret|