Learn about the fundamentals of nanoelectronics in a set of broadly accessible short courses. Selected semester courses in the nanoHUB-U format are also available at nanoHUB-U.
More than 50 years of research and development have created the sophisticated technologies that have shaped the world we live in. The transformation of engineering education from the practice-driven vacuum tube era to our science-driven semiconductor era played an important role in this success. Today we face new challenges in educating students, engineers, and applied scientists for a new era of electronics. Engineers will continue to need a deep understanding of their specialty, but they now also need a much broader understanding of science and technology than in the past. They need to be comfortable working from the atomic scale to the macroscale – from the materials and devices level to the system level. Lessons from Nanoscience aims to bring new approaches and new ways of thinking to materials, devices, and systems. The goal is to re-think the way we teach these topics so that working from the nanoscale to the system scale is seamless and intuitive. The Lessons from Nanoscience lecture notes series is one component of an ambitious educational initiative that includes free, online short courses offered through nanoHUB-U.org.
The MOS-AK Association, a global compact/SPICE modeling and Verilog-A standardization forum, held its annual Q4 event on December 7, 2016 UC Berkeley as its 9th consecutive International MOS-AK Workshop. The event was coordinated by Larry Nagel, OEC (USA) and Andrei Vladimirescu, UCB (USA); ISEP (FR) representing the International MOS-AK Board of R&D Advisers. The workshop was hosted by Prof. Jaijeet Roychowdhury of EECS at the University of California at Berkeley and co-sponsored by Keysight Technologies and NEEDS.
This hands-on workshop will focus on the newly developed Verilog-A to ModSpec device model translator for MAPP, dubbed VAPP (Verilog-A Parser and Processor). The goal of the workshop is to illustrate how VAPP/MAPP facilitates the development of simulation ready compact models. An overview of MAPP's multi-physics modelling and simulation capabilities will also be provided. A hands-on refresher on MAPP will be provided for those who have no prior experience with it.
Variability has emerged as a fundamental challenge to IC design in scaled CMOS technology; and it has profound impact on nearly all aspects of circuit performance. While some of the negative effects of variability can be handled via improvements in the manufacturing process, comprehensive methods are necessary to assess and manage the negative effects of variability, which in turn requires accurate and tractable variability models. The goal of the VMC workshop is to provide a forum for theoreticians and practitioners to freely exchange opinions on current practices as well as future research needs in variability modeling and characterization. The 2015 VMC was co-organized with NSF-SRC NEEDS.
Annual summer schools address nanoelectronics from science to circuits and systems. (2015 Summer School on Uncertainty Quantification is now available.)
This workshop is designed to help attendees get started using MAPP in a hands-on manner. Attendees will learn how to write and test models in MAPP, how to translate them to Verilog-A, and how to use MAPP to validate Verilog-A models.
This workshop presented a tutorial introduction to the Matlab-based compact model development platform being developed at UC Berkeley.
Compact models must get the physics right, work reliably over bias, geometry, and temperature, interact properly with the circuit simulators in which they are implemented, run efficiently, and follow impeccable software development practices. This workshop will be a detailed deep-dive into an industrial strength Verilog-A code for the R3 model for JFETs, diffused resistors, and polysilicon resistors. Do not think that a “resistor” is a trivially simple device to model: real resistors are affected by depletion pinching, velocity saturation, and self-heating, and to properly account for all of these effects, while ensuring no unphysical model behavior, is not trivial. But it is not as complex as a complete MOS or bipolar transistor model – so is ideal as a training vehicle for compact modeling.
Seminar series on a variety of topics in nanotechnology – from materials to compact models to circuits, systems, and applications.
ECE 670: Landau Electronics (2015)
Seminars on a variety of topics in nanotechnology – from materials to compact models to circuits, systems, and applications.
The Berkeley Model and Algorithm Prototyping Platform (Roychowdhury)
Flat Photonics Using High Contrast Metastructures (Chang-Hasnain)
Molecular Transistors (Reed)
The MVS Nanotransistor Model: A Primer (Lundstrom)
Xyce – An Open Source SPICE Engine (Keiter)
Silicon MEMS + Photonic Systems (Bhave)
RF Solid-State Vibrating Transistors (Weinstein)
Forum on the Future of Electronics (Mark Lundstrom, Supriyo Datta, Gerhard Klimeck, Muhammad Alam, Timothy S Fisher)
|Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices||Raseong Kim|
|Landauer Approach to Thermoelectrics||Changwook Jeong|
|III-V Nanoscale MOSFETS: Physics, Modeling, and Design||Yang Liu|
|Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic||Himadri Pal|
|Quantum and Atomistic Effects in Nanoelectronic Transport Devices||Neophytos Neophytou|
|Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices||Siyu Koswatta|
|Electron Phonon Interaction in Carbon Nanotube Devices||Sayed Hasan|
|Exploring New Channel Materials for Nanoscale CMOS||Anisur Rahman|
|Device Physics and Simulation of Silicon Nanowire Transistors||Jing Wang|
|Carbon Nanotube Electronics: Modeling, Physics, and Applications||Jing Guo|
|Modeling Quantum Transport in Nanoscale Transistors||Ramesh Venugopal|
|Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors||Jung-Hoon Rhew|
|Nanoscale MOSFETS: Physics, Simulation and Design||Zhibin Ren|
|Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S||Carl R. Huster|
|Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices||Kausar Banoo|
|Computational and Experimental Study of Transport in Advanced Silicon Devices||Farzin Assad|
|Exams for Semiconductor Device Fundamentals||Robert F. Pierret|
|Semiconductor Device Fundamentals Testbook Module A: Semiconductor Basics||Robert F. Pierret|
|Semiconductor Device Fundamentals Testbook Module B: Diode Basics||Robert F. Pierret|
|Semiconductor Device Fundamentals Testbook Module C: Transistor Basics||Robert F. Pierret|