The virtual source (VS) model describes the behavior of nanoscale transistors in the quasi-ballistic regime. The MIT implementation of the VS model is referred to as the “MVS” model and has been extensively used for device characterization and technology benchmarking. Several versions of this basic model have been implemented and are available on the NEEDS site.
The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters .
MVS Nanotransistor Model (Silicon) 1.1.0: The original model described in  and intended for Si MOSFETs.
MVS III-V HEMT model 1.2.0: A version of the MVS-1 model for III-V HEMTs.
A second generation MVS model that reduces the empiricism and is applicable to both III-V and Si MOSFETs [2, 3].
 A. Khakifirooz, O.M. Nayfeh, and D. Antoniadis, “A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters,” IEEE Trans. Electron Dev., 56, pp. 1674 – 1680, 2009.
 Shaloo Rakheja, Mark Lundstrom, and Dimitri Antoniadis, “An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors - Part I: Capturing Effects of Carrier Degeneracy, Drain-Bias Dependence of Gate Capacitance, and Non-linear Channel-Access Resistance," IEEE Trans. Electron Dev., 62, pp. 2786-2793, 2015.
 Shaloo Rakheja, Mark Lundstrom, and Dimitri Antoniadis, “An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors - Part II: Experimental Verification,” IEEE Trans. Electron Dev., 62, pp. 2794-2801, 2015.
 M. S. Lundstrom and D.A. Antoniadis, “Compact Models and the Physics of Nanoscale FETs,” IEEE Trans. Electron Dev., vol. 61, pp. 2252-233, 2014.
 A. Majumdar and D.A. Antoniadis, “Analysis of carrier transport in short-channel MOSFETs,” IEEE Trans. Electron Dev., vol. 61, pp. 351-358, 2014.