UCSB Graphene Nanoribbon Interconnect Compact Model
20 Apr 2017 | Contributor(s): Junkai Jiang, Kaustav Banerjee, Wei Cao | doi:10.4231/D3NK3663N
This model describes the circuit-level behavior of the (intercalation) doped GNR interconnect, and is compatible with both DC and transient SPICE simulations.
21 Apr 2015 | Contributor(s): Junkai Jiang, Wei Cao, Kaustav Banerjee | doi:10.4231/D34Q7QR19
UCSB GNR interconnect model is based on a distributed RLC circuit, in which carrier mean free path, graphene doping concentration (Fermi level) and number of layers are considered. The model was originally published by UCSB NRL group.
UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model
25 Mar 2015 | Contributor(s): Wei Cao, Kaustav Banerjee | doi:10.4231/D37940V7H
a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions
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