MIT TFET compact model including the impacts of non-idealities

03 May 2017 | Contributor(s): Redwan Noor Sajjad, Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3XW47X6W

We present a compact model for tunnel FET that for the first time fits experimental transfer and output characteristics including the impact of non-idealities such as trap assisted tunneling and intrinsic band steepness.