30 Mar 2006 | Tools | Contributor(s): Shaikh S. Ahmed, Saumitra Raj Mehrotra, SungGeun Kim, Matteo Mannino, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Gloria Wahyu Budiman
Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)
Resonant Tunneling Diode Simulation with NEGF
18 Aug 2008 | Tools | Contributor(s): Hong-Hyun Park, Zhengping Jiang, Arun Goud Akkala, Sebastian Steiger, Michael Povolotskyi, Tillmann Christoph Kubis, Jean Michel D Sellier, Yaohua Tan, SungGeun Kim, Mathieu Luisier, Samarth Agarwal, Michael McLennan, Gerhard Klimeck, Junzhe Geng
Simulate 1D RTDs using NEGF.
MuGFET: First-Time User Guide
28 Apr 2008 | Teaching Materials | Contributor(s): SungGeun Kim, Sriraman Damodaran, Benjamin P Haley, Gerhard Klimeck
MuGFET is a simulation tool for nano-scale multi-gate FET structures.
This document provides instructions on how to use MuGFET.
MuGFET users can use also the PROPHET or the PADRE tool. Either of these provide self-consistent solutions to the Poisson and drift-diffusion equation.
At the nanometer …
OMEN Nanowire Supporting Document
21 Feb 2009 | Downloads | Contributor(s): SungGeun Kim, Gerhard Klimeck, Mathieu Luisier
This material supplements the first-time user guide for OMEN Nanowire with details concerning the limitation of the tool at large gate voltage. At large gate voltage, the calculations of the drain current can be incorrect when the Poisson solver in OMEN does not converge. This problem is not …
OMEN Nanowire: First-Time User Guide
21 Feb 2009 | Teaching Materials | Contributor(s): SungGeun Kim, Benjamin P Haley, Mathieu Luisier, Saumitra Raj Mehrotra, Gerhard Klimeck
This is the first-time user guide for OMEN Nanowire. In addition to showing how the tool operates, it briefly explains what the OMEN Nanowire is, what it can do, and the input and output relationship.
 Sung Dae Suk, et. al., IEDM, 2005, "High Performance 5nm radius Twin Silicon …