Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Emerging CMOS Technology at 5 nm and Beyond: Device Options and Trade-offs
14 Dec 2015 | Presentation Materials | Contributor(s): Mark Lundstrom, Xingshu Sun, Dimitri Antoniadis, Shaloo Rakheja
Device Options and Trade-offs
The Deployment and Evolution of the First NEEDS- Certified Model — MIT Virtual Source Compact Model for Silicon Nanotransistors
04 Oct 2015 | Online Presentations | Contributor(s): Shaloo Rakheja
In my talk, I will walk you through the fundamental steps involved in developing compact models, using the MVS model as an example. From the “lessons learned” in the process of MVS release in 2013 and its subsequent updates, I will provide a checklist of good practices to adopt while writing your own compact model. I will also visit the broad requirements that models must meet to be NEEDS- certified, and the process for deploying compact models on the nanoHUB website, which has served as anideal place for hosting open source projects focused on the development of nanotechnology.
The MVS Nanotransistor Model: A Case Study in Compact Modeling
26 Nov 2014 | Online Presentations | Contributor(s): Shaloo Rakheja
In this talk, I will present my view on building an industry-standard compact model by using the MVS model as a case study. In the first part of the talk, I discuss mathematical issues, such as the smoothness of functions and their higher-order derivatives in connection with the MVS model. While mathematical smoothing techniques are commonly used in compact models to ensure convergence of circuit simulation, they may also produce undesirable and misleading artifacts in simulation. Examples from the MVS model will be used to highlight the merits and limitations of commonly used mathematical smoothing techniques. I will also introduce the definition and testing methodology for MOSFET symmetry and discuss the response of the MVS model to the various symmetry operations.
Ambipolar Virtual Source Compact Model for Graphene FETs 1.0.0
23 Jul 2014 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis
A physics-based compact model for ambipolar transport in quasi-ballistic graphene transistors. The transport model is supplemented by a self-consistent channel-charge partitioning model that is valid all the way from drift-diffusive to ballistic regime.
The Role of Graphene in Semiconductor Technologies
22 Jul 2014 | Online Presentations | Contributor(s): Shaloo Rakheja
This talk examines the requirements and challenges that must be met for graphene electronics, and discuss possible solutions.
Top 5 shown | See more results