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A Verilog-A Compact Model for Negative Capacitance FET
05 Apr 2016 | Compact Models |Contributor(s): Muhammad Abdul Wahab, Muhammad A. Alam
The NC-FET compact model is a semi-physical verilog-A model of the negative capacitance transistor. We developed this self-consistent model with BSIM4/MVS and Landau theory. This model is useful to design NC-FET for high speed and low power...
FET pH Sensor Model
03 Nov 2014 | Compact Models |Contributor(s): Piyush Dak, Muhammad A. Alam
The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.
Non-Faradaic Impedance-based Biosensor Model
25 Sep 2015 | Compact Models |Contributor(s): Piyush Dak, Muhammad A. Alam
The non-Faradaic impedance model is a physics-based compact model that describes the small-signal operation of a sensor that relies on electrochemical detection of analyte molecules.
TAG Solar Cell Model (p-i-n thin film)
23 Oct 2014 | Compact Models |Contributor(s): Sourabh Dongaonkar, Xingshu Sun, Mark Lundstrom, Muhammad A. Alam
The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.
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nanoHUB-U: Principles of Electronic Nanobiosensors
ECE 695A Reliability Physics of Nanotransistors
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2008 NCN@Purdue Summer School: Electronics from the Bottom Up
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26 Aug 2008 | Workshops | Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
2009 NCN@Purdue Summer School: Electronics from the Bottom Up
22 Sep 2009 | Workshops | Contributor(s): Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller
A Blind Fish in a River with a Waterfall
23 Mar 2010 | Tools | Contributor(s): Muhammad Alam, Sajia Sadeque
A Physical Model for Non-Ohmic Shunt Conduction and Metastability in Amorphous Silicon Solar Cells
16 Aug 2011 | Online Presentations | Contributor(s): Sourabh Dongaonkar, Souvik Mahapatra, Karthik Yogendra, Muhammad Alam
A Tutorial Introduction to Negative-Capacitor Landau Transistors: Perspectives on the Road Ahead
04 Dec 2015 | Online Presentations | Contributor(s): Muhammad A. Alam
In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader class of phase-change devices and systems (e.g., transistors, memories, MEMS, logic-in-memory architecture) that operate by tailoring the Landau potential energy landscape, once NC-FET is understood, the operation of all other devices becomes intuitively obvious as well. The talk will conclude with a discussion of four possible roads to improving NC-FET device performance.
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French & American Young Engineering Scientists Symposium 2009
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Scientists and engineers from the US and France have been building collaborative linkages between young scientists over the last two years through a series of workshops and symposia sponsored by the U.S. National Science Foundation, and the Office for Science and Technology of the...
NCN Nano-Devices for Medicine and Biology
This NCN theme seeks to extend the understanding and computational tools developed in the Nanoelectronics and NEMS themes and apply them to the development of devices for medicine and biology. The long-term vision is to develop a full hierarchy of coupled models and simulations that constitute...