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Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices
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30 Jun 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Mobility degradation due to generation of interfacetraps, Δµeff(NIT), is a well-known phenomenon that has beentheoretically interpreted by several mobility models. Based onthese analysis, there is a general perception that Δµeff(NIT) isrelatively insignificant (compared to Δµeff due to...
Computational Modeling: Experience from my Bell Lab Days
5.0 out of 5 stars
19 Dec 2007 | Online Presentations | Contributor(s): Muhammad A. Alam
This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.
Electronics From the Bottom Up: top-down/bottom-up views of length
17 Aug 2007 | Online Presentations | Contributor(s): Muhammad A. Alam
When devices get small stochastic effects become important. Random dopant effects lead to uncertainties in a MOSFET’s threshold voltage and gate oxides breakdown is a random process. Even a concept as simple as “channel length” becomes uncertain. This short (20 min) talk, a footnote to the...
Electronics from the Bottom Up: an educational initiative on 21st century electronics
17 Aug 2007 | Online Presentations | Contributor(s): Mark Lundstrom, Supriyo Datta, Muhammad A. Alam
In the 1960’s, a group of leaders from industry and academia, recognized that the age of vacuum tubes was ending and that engineers would have to be educated differently if they were to realize the opportunities that the new field of microelectronics presented. The Semiconductor Electronics...
Geometry of Diffusion and the Performance Limits of Nanobiosensors
05 Dec 2006 | Online Presentations | Contributor(s): Muhammad A. Alam, Pradeep Ramachandran Nair
This presentation demonstrates how the classical diffusion-capture (D-C) model has improved sensor performance, since the D-C model is a "geometry of diffusion" rather than a "geometry of electrostatics." A scaling law based on D-C is also posited; the scaling law resolves many classical puzzles...
The Long and Short of Pick-up Stick Transistors: A Promising Technology for Nano- and Macro-Electronics
11 Apr 2006 | Online Presentations | Contributor(s): Muhammad A. Alam
In recent years, there has been enormous interest in the emerging field of large-area macro-electronics, and fabricating thin-film transistors on flexible substrates. This talk will cover recent work in developing a comprehensive theoretical framework to describe the performance of these...
On the Reliability of Micro-Electronic Devices: An Introductory Lecture on Negative Bias Temperature Instability
28 Sep 2005 | Online Presentations | Contributor(s): Muhammad A. Alam
In 1930s Bell Labs scientists chose to focus on Siand Ge, rather than better known semiconductors like Ag2S and Cu2S, mostly because of their reliable performance. Their choice was rewarded with the invention of bipolar transistors several years later. In 1960s, scientists at Fairchild worked...