
ECE 606 Lecture 13a: Fermi Level Differences for Metals and Semiconductors
16 Feb 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Short chalkboard lecture on Fermi level and band diagram differences for metals and semiconductors.

ECE 606 Lecture 9: FermiDirac Statistics
04 Feb 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
 Rules of filling electronic states
 Derivation of FermiDirac Statistics: three techniques
 Intrinsic carrier concentration
 Conclusion
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid State Devices, Volume VI, AddisonWesley, 1987, Chapter 4 (pages 96105)

ECE 606 Lecture 8: Density of States
04 Feb 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
 Calculation of density of states
 Density of states for specific materials
 Characterization of Effective Mass
 Conclusions
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid State Devices, Volume VI, AddisonWesley, 1987, Chapter 3 (pages 8896)

ECE 606 Lecture 7: Energy Bands in Real Crystals
04 Feb 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
 Ek diagram/constant energy surfaces in 3D solids
 Characterization of Ek diagram: Bandgap
 Characterization of Ek diagram: Effective Mass
 Conclusions
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid State Devices, Volume VI, AddisonWesley, 1987, Chapter 3 (pages 7177)

ECE 606 Lecture 5: Energy Bands
04 Feb 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
 Schrodinger equation in periodic U(x)
 Bloch theorem
 Band structure
 Properties of electronic bands
 Conclusions
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid State Devices, Volume VI, AddisonWesley, 1987, Chapter 3 (pages 5162)

ECE 606 Lecture 6: Energy Bands (continued)
04 Feb 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
 Properties of electronic bands
 Ek diagram and constant energy surfaces
 Conclusions
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid State Devices, Volume VI, AddisonWesley, 1987, Chapter 3 (pages 6370)

ECE 606 Lecture 4: Solution of Schrodinger Equation
04 Feb 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
 Timeindependent Schrodinger Equation
 Analytical solution of toy problems
 Bound vs. tunneling states
 Conclusions
 Additional Notes: Numerical solution of Schrodinger Equation
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid State Devices, Volume VI, AddisonWesley, 1987, Chapter 2 (pages 2945)

ECE 606 Lecture 3: Elements of Quantum Mechanics
28 Jan 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
 Why do we need quantum physics
 Quantum concepts
 Formulation of quantum mechanics
 Conclusions
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid State Devices, Volume VI, AddisonWesley, 1987, Chapter 1 (pages 2332)

ECE 606 Lecture 2: Geometry of Periodic Crystals
28 Jan 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
 Volume & surface issues for BCC, FCC, Cubic lattices
 Important material systems
 Miller indices
 Conclusions
Helpful software tool: Crystal Viewer in the ABACUS tool suite.
R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular Series on Solid State Devices, Volume VI, AddisonWesley, 1987, Chapter 1 (pages 1017)

ECE 606 Lecture 1: Introduction
28 Jan 2009  Online Presentations  Contributor(s): Muhammad A. Alam
Outline:
 Course information
 Current flow in semiconductors
 Types of material systems
 Classification of crystals

ECE 606 Lecture 32: MOS Electrostatics I
19 Nov 2008  Online Presentations  Contributor(s): Muhammad A. Alam

ECE 606 Lecture 26: Schottky Diode II
19 Nov 2008  Online Presentations  Contributor(s): Muhammad A. Alam

ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET
14 Nov 2008  Online Presentations  Contributor(s): Muhammad A. Alam
Guest lecturer: Muhammad A. Alam.

ECE 606: Principles of Semiconductor Devices
12 Nov 2008  Courses  Contributor(s): Muhammad A. Alam
In the last 50 years, solid state devices like transistors have evolved from an interesting laboratory experiment to a technology with applications in all aspects of modern life. Making transistors is a complex process that requires unprecedented collaboration among material scientists, solid state physicists, chemists, numerical analysts, and software professionals. And yet, as you will see in part 1 of this course (first 5 weeks), that the basics of current flow though solid state …

Lecture 2: Thresholds, Islands, and Fractals
04 Nov 2008  Online Presentations  Contributor(s): Muhammad A. Alam
Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via elementary examples. These three concepts will form the theoretical foundation for discussion in Lecture 3, 4, and 5, respectively.
NCN@Purdue Summer School 2008
National Science Fondation
Intel Corporation

Lecture 1: Percolation in Electronic Devices
04 Nov 2008  Online Presentations  Contributor(s): Muhammad A. Alam
Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity of these phenomena however, the concepts percolation theory provides a broad theoretical framework to understand them in an unified manner.

Percolation Theory
03 Nov 2008  Courses  Contributor(s): Muhammad A. Alam
The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon or metal crystals in nanocrystal Flash memory, the number of Nanowires in a flexible nanoNET transistor, the number of crystals in an polycrystalline transistors, etc. are all finite, and countable. Moreover many devices like supercapacitors and organic solar cells depend on the randomness their morphology to enhance their performance. How should we think about electron transport through such random systems? The traditional approaches based on effective media theory, virtual crystal approximation, or Monte Carlo simulation are generally not very effective in describing such transport well. This short course introduces percolation theory to electrical engineers and device physicists as a powerful technique to handle such stochastically random transport problems of electronic devices.

Introductory Comments
29 Sep 2008  Online Presentations  Contributor(s): Muhammad A. Alam

2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008  Workshops  Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottomup perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two contacts. For carrier transport, it means beginning at the nanoscale where ballistic transport, atomistic effects, and stochastic effects dominate. For MOSFETs, it means beginning with the “ultimate” MOSFET. Electronics from the Bottom Up does not mean ab initio numerical simulations – it means beginning with concepts and approaches that are both simple and sound at the nanoscale rather than extrapolated from the microscale.

Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices
30 Jun 2008  Online Presentations  Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Mobility degradation due to generation of interface
traps, Δµeff(NIT), is a wellknown phenomenon that has been
theoretically interpreted by several mobility models. Based on
these analysis, there is a general perception that Δµeff(NIT) is
relatively insignificant (compared to Δµeff due to ionized
impurity) and as such can be safely ignored for performance and
reliability analysis. Here, we investigate the importance of
considering Δµeff(NIT) for reliability analysis by analyzing a ...

Homework Exercise on Bipolar Junction Transistors
30 Mar 2008  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Muhammad A. Alam, Gerhard Klimeck
The tutorial questions are based on the Bipolar Junction Transistor Lab v1.0 available online at Bipolar Junction Transistor Lab. Students are asked to find the emitter efficiency, the base transport factor, current gains, and the Early voltage. Also a qualitative discussion is requested.NCN@Purdue

BioSensorLab
14 Aug 2006  Tools  Contributor(s): Pradeep R. Nair, Jonghyun Go, Graeme John Landells, Tejas Rajiv Pandit, Muhammad Alam, Xin Jin, Piyush Dak, Ankit Jain
BioSensorLab is a tool to evaluate and predict the performance parameters of Biosensors.

Computational Modeling: Experience from my Bell Lab Days
19 Dec 2007  Online Presentations  Contributor(s): Muhammad A. Alam
This presentation was one of 13 presentations in the oneday forum,
"Excellence in Computer Simulation," which brought together a broad
set of experts to reflect on the future of computational science and
engineering.

Reliability Physics of Nanoscale Transistors
27 Nov 2007  Courses  Contributor(s): Muhammad A. Alam
This course is now offered on nanoHUB as ECE 695A Reliability Physics of Nanotransistors.

Electronics From the Bottom Up: topdown/bottomup views of length
17 Aug 2007  Online Presentations  Contributor(s): Muhammad A. Alam
When devices get small stochastic effects become important. Random
dopant effects lead to uncertainties in a MOSFET’s threshold voltage
and gate oxides breakdown is a random process. Even a concept as
simple as “channel length” becomes uncertain. This short (20 min)
talk, a footnote to the presentation, “An Introduction to Electronics
from the Bottom Up,” shows that these two seemingly unrelated
problems are part of a more general problem involving percolative
transport at the nanoscale.