Find information on common issues.

Ask questions and find answers from other users.

Suggest a new site feature or improvement.

Check on status of your tickets.

ECE 606 Lecture 17: Hall Effect, Diffusion

0.0 out of 5 stars

24 Feb 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

Outline:Measurement of mobilityHall Effect for determining carrier concentrationPhysics of diffusionConclusions

ECE 606 Lecture 16: Carrier Transport

23 Feb 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

ECE 606 Lecture 15: Surface Recombination/Generation

29 Mar 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

Outline:Nature of interface statesSRH formula adapted to interface statesSurface recombination in depletion regionConclusion

ECE 606 Lecture 14: Bulk Recombination

5.0 out of 5 stars

Outline:Derivation of SRH formulaApplication of SRH formula for special casesDirect and Auger recombinationConclusion

ECE 606 Lecture 13: Recombination-Generation

16 Feb 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

Outline:Non-equilibrium systemsRecombination generation eventsSteady-state and transient responseDerivation of R-G formulaConclusion

ECE 606 Lecture 12: Equilibrium Concentrations

Outline:Carrier concentrationTemperature dependence of carrier concentrationMultiple doping, co-doping, and heavy-dopingConclusion

ECE 606 Lecture 11: Equilibrium Statistics

Outline:Law of mass-action & intrinsic concentration Statistics of donors and acceptor levelsConclusion

ECE 606 Lecture 10: Additional Information

Outline:Potential, field, and chargeE-k diagram vs. band-diagramBasic concepts of donors and acceptorsConclusion

ECE 606 Lecture 9: Fermi-Dirac Statistics

04 Feb 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

Outline:Rules of filling electronic statesDerivation of Fermi-Dirac Statistics: three techniquesIntrinsic carrier concentrationConclusion

ECE 606 Lecture 8: Density of States

Outline:Calculation of density of statesDensity of states for specific materialsCharacterization of Effective MassConclusions

ECE 606 Lecture 7: Energy Bands in Real Crystals

Outline:E-k diagram/constant energy surfaces in 3D solidsCharacterization of E-k diagram: BandgapCharacterization of E-k diagram: Effective MassConclusions

ECE 606 Lecture 6: Energy Bands (continued)

Outline:Properties of electronic bandsE-k diagram and constant energy surfacesConclusions

ECE 606 Lecture 5: Energy Bands

3.0 out of 5 stars

Outline:Schrodinger equation in periodic U(x)Bloch theoremBand structureProperties of electronic bandsConclusions

ECE 606 Lecture 4: Solution of Schrodinger Equation

Outline:Time-independent Schrodinger EquationAnalytical solution of toy problemsBound vs. tunneling statesConclusionsAdditional Notes: Numerical solution of Schrodinger Equation

ECE 606 Lecture 3: Elements of Quantum Mechanics

28 Jan 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

Outline:Why do we need quantum physicsQuantum conceptsFormulation of quantum mechanicsConclusions

ECE 606 Lecture 2: Geometry of Periodic Crystals

Outline:Volume & surface issues for BCC, FCC, Cubic latticesImportant material systemsMiller indices ConclusionsHelpful software tool: Crystal Viewer in the ABACUS tool suite.

ECE 606 Lecture 1: Introduction

4.5 out of 5 stars

Outline:Course information Current flow in semiconductors Types of material systems Classification of crystals

ECE 606: Principles of Semiconductor Devices

12 Nov 2008 | Courses | Contributor(s): Muhammad A. Alam

In the last 50 years, solid state devices like transistors have evolved from an interesting laboratory experiment to a technology with applications in all aspects of modern life. Making transistors is a complex process that requires unprecedented collaboration among material scientists, solid...

Lecture 2: Thresholds, Islands, and Fractals

04 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via elementary examples. These three concepts will form the theoretical foundation for discussion in...

Lecture 1: Percolation in Electronic Devices

Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity of these phenomena however, the concepts percolation theory provides a broad theoretical framework...

Percolation Theory

03 Nov 2008 | Courses | Contributor(s): Muhammad A. Alam

The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon- or metal crystals in nanocrystal Flash memory, the number of Nanowires in a flexible nanoNET...

Introductory Comments

29 Sep 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

2008 NCN@Purdue Summer School: Electronics from the Bottom Up

26 Aug 2008 | Workshops | Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom

Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two...

Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices

30 Jun 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam

Mobility degradation due to generation of interfacetraps, Δµeff(NIT), is a well-known phenomenon that has beentheoretically interpreted by several mobility models. Based onthese analysis, there is a general perception that Δµeff(NIT) isrelatively insignificant (compared to Δµeff due to...

Homework Exercise on Bipolar Junction Transistors

30 Mar 2008 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Muhammad A. Alam, Gerhard Klimeck

The tutorial questions are based on the Bipolar Junction Transistor Lab v1.0 available online at Bipolar Junction Transistor Lab. Students are asked to find the emitter efficiency, the base transport factor, current gains, and the Early voltage. Also a qualitative discussion is requested.NCN@Purdue