ECE 695E Lecture 7: Bootstrap, Cross-Validation, and Goodness of Fit
24 Jan 2019 | Online Presentations | Contributor(s): Muhammad A. Alam
Outline Introdution Goodness of Fit: Adjusted R-square, AIC methods, etc. Cross-validation: Another way to compare models Bootstrap method to generation population properties based on sample characteristics Parametric vs. non-parametric distribution Conclusions
Introductory Comments
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29 Sep 2008 | Online Presentations | Contributor(s): Muhammad A. Alam
ECE 695E Lecture 10: Big Data Classification by Principal Component Analysis
Outline Introduction Why do we need reduction in data dimension Theory of Principle Component Analysis Applications of Principle Component Analysis Conclusions
ECE 695E Lecture 9B: DOE Analysis by ANOVA
OutlineIntroduction to Analysis of Variance (Anova)Single factor Analysis of VarianceTwo factor AnovaGeneralized AnovaConclusions
ECE 695E Lecture 6: Equation-free Scaling Theory for Design of Experiments
09 Jan 2019 | Online Presentations | Contributor(s): Muhammad A. Alam
Outline: Introduction Buckingham PI Theorem An Illustrative Example Why does the method work Conclusions
ECE 695E Lecture 8: Statistical Design of Experiments
18 Jan 2019 | Online Presentations | Contributor(s): Muhammad A. Alam
Outline:Context and backgroundSingle factor and full factorial methodOrthogonal vector analysis: Taguchi/Fisher modelCorrelation in dependent parametersConclusions
A Blind Fish in a River with a Waterfall
23 Mar 2010 | Tools | Contributor(s): Muhammad Alam, Sajia Sadeque
Prototype for a reliability problem defined as Stochastic Process with a Threshold
How to Write a Journal Paper
3.5 out of 5 stars
31 Aug 2017 | Online Presentations | Contributor(s): Muhammad A. Alam
FeFET Memory Window Analytical Calculator
16 Dec 2019 | Downloads | Contributor(s): Nicolo Zagni, Paolo Pavan, Muhammad A. Alam
This code computes the Memory Window of a FeFET by using the Landau-Devonshire theory. The aim of this code is to illustrate: the derivation of the switching conditions the trends of MW scaling with ferroelectric thickness the design constraints to guarantee hysteresis the effect of...
Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices
30 Jun 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Mobility degradation due to generation of interfacetraps, Δµeff(NIT), is a well-known phenomenon that has beentheoretically interpreted by several mobility models. Based onthese analysis, there is a general perception that Δµeff(NIT) isrelatively insignificant (compared to Δµeff due to...
ECE 695E Lecture 15: Conclusions and Outlook
07 Jan 2019 | Online Presentations | Contributor(s): Muhammad A. Alam
Outline Introduction Review of the lectures Conclusions
Suns-Vmp Method
04 Jun 2018 | Downloads | Contributor(s): Xingshu Sun, Raghu Vamsi Krishna Chavali, Muhammad A. Alam
This package contains the Matlab scripts to perform the Suns-Vmp method. The code has been tested in Matlab R2016a.
Forum on the Future of Electronics: Panel Discussion
18 Oct 2013 | Presentation Materials | Contributor(s): Mark Lundstrom, Supriyo Datta, Gerhard Klimeck, Muhammad Alam, Timothy S Fisher
Presentation slides from a panel discussion on the Future of Electronics.
ECE 695A Lecture 37: Effect of Radiation Induced Charge - Soft Errors
29 Apr 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline:Sources of radiationBasics of charge generation and perturbation of potentialCharges and junctionsConclusions
The Transistor at 75
02 Feb 2023 | Series | Contributor(s): Mark Lundstrom, Michael J. Manfra, Muhammad A. Alam, Ekaterina Babintseva
Purdue celebrates the 75th anniversary of the invention of the transistor.
ECE 695A Lecture 36: Radiation Induced Damage – an overview
[Illinois] How to Break the "Fundamental" Limits of Nanobiosensing
07 Apr 2014 | Online Presentations | Contributor(s): Muhammad A. Alam
As the future of Moore’s law of transistor scaling appears uncertain, electronics is being reinvented by broadening the focus to other areas including macroelectronics (electronics of large, possibly flexible and transparent displays), bioelectronics (e.g., nanobio sensors for genomics,...
nanoHUB-U: Principles of Nanoelectronic Biosensors Week One Scripts
10 Nov 2013 | Online Presentations | Contributor(s): Muhammad A. Alam
Purdue University Meteorological Tool
17 Nov 2017 | Tools | Contributor(s): Binglin Zhao, Xingshu Sun, Mohammad Ryyan Khan, Muhammad A. Alam
Provide meteorological data from national databases.
Hydrogel based Biochemical Sensors
08 Jul 2016 | Downloads | Contributor(s): Piyush Dak, Muhammad A. Alam
This is MATLAB code for a Hydrogel based biochemical sensor: The sensor is composed of a hydrogel sandwiched between a rigid porous membrane and a deformable membrane. The hydrogel is pendent with the ionizable groups (with density, Nf and acid dissociation constant, Ka) which are...
Tutorial Lecture: Potentiometric Sensors Ion Selective Sensors - An Introduction
06 Jun 2019 | Online Presentations | Contributor(s): Muhammad A. Alam
Purdue Microelectronics and Nanotechnology Overview
09 Sep 2021 | Online Presentations | Contributor(s): Samantha Nelson, Muhammad A. Alam, Joerg Appenzeller, Zhihong Chen, Supriyo Datta, David Janes, Gerhard Klimeck, Dana Weinstein, Pramey Upadhyaya, Peide "Peter" Ye
In today’s modern world, microelectronics has touched every aspect of our lives. None of us can imagine or live in a world without personal computers, smart phones, and probably very soon autonomous cars. To continue its expansion and go beyond the traditional semiconductor technologies,...
ECE 695A Lecture 9R: Review Questions
08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review Questions:Does NBTI power-exponent depend on voltage or temperature?Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?How does one know that the diffusing species is neutral?How would the time-exponent different for a surround gate MOSFET vs. planar...
From Apollo to Apple: How a Purdue Alum, Mohamed Atalla, Started Moore's Law and Transformed the World
02 Feb 2023 | Online Presentations | Contributor(s): Muhammad A. Alam
The Silicon MOSFET, a better transistor. Demonstration of the 1960 silicon MOSFET (metal-oxide-semiconductor field-effect transistor), the mainstay of today’s electronics, which was co-invented by Purdue alumnus Mohamed M. Atalla at Bell Labs.
Only Physics can save Machine Learning!
13 Oct 2020 | Online Presentations | Contributor(s): Muhammad A. Alam