2014 NCN-NEEDS Summer School: Spintronics - Science, Circuits, and Systems
Top 1 shown
Magnetic Tunnel Junction Lab
23 Sep 2013 | Tools | Contributor(s): Samiran Ganguly, Deepanjan Datta, Chen Shang, Sankarsh Ramadas, Sayeef Salahuddin, Supriyo Datta
Calculate Resistance, Tunneling Magneto Resistance, Spin Torques, and Switching characteristics of a Magnetic Tunnel Junction
Quantitative Model for TMR and Spin-transfer Torque in MTJ devices
01 Sep 2013 | Papers | Contributor(s): Deepanjan Datta, Behtash Behin-Aein, Sayeef Salahuddin, Supriyo Datta
We present a Non-Equilibrium Green's Function (NEGF)-based model for spin torque transfer (STT) devices which provides qualitative as well as quantitative agreement with experimentally measured (1) differential resistances, (2) Magnetoresistance (MR), (3) In-plane torque (τ||) and (4)...
Voltage Asymmetry of Spin-Transfer Torques
Experimentally, it is seen that the free magnetic layer of a spin torque transfer (STT) device experiences a larger in-plane torque when a negative (rather than positive) voltage is applied to the fixed layer. This is surprising because magnets do not have any intrinsic asymmetry. In this paper,...
Top 3 shown
MIT Virtual Source Negative Capacitance (MVSNC) model
27 Feb 2017 | Contributor(s): Ujwal Radhakrishna, Asif Islam Khan, Sayeef Salahuddin, Dimitri Antoniadis | doi:10.4231/D3K649T9T