Ballistic Nanotransistors - Learning Module
07 Dec 2005 | Learning Modules | Contributor(s): Mark Lundstrom
This resource is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new insights into the performance and limits of nanoscale MOSFETs. The materials presented below introduces the basic theory and shows how it can be applied to current problems in device research. The concepts are illustrated by exercises that make use of live simulations with the program, FETToy.