
Lecture 3A: The Ballistic MOSFET
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture  just a proper mathematical derivation of the approach that was developed intuitively in Lecture 2.

Lecture 3B: The Ballistic MOSFET
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.

Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional understanding of electronic devices needs to be complemented with a new perspective that begins from the nanoscale. My objectives in this talk are: 1) to describe a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of nanoscale dimensions, and 2) to introduce the “bottom up” approach, a way of understanding nanoscale electronics very generally. This talk will provide a starting point for those interested in exploring the electronics from the bottom up approach through the resources of nanoHUB.org.

ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Short review,
2) Gate voltage / surface potential relation,
3) The flatbandvoltage,
4) MOS capacitance vs. voltage,
5) Gate voltage and inversion layer charge.

ECE 612 Lecture 2: 1D MOS Electrostatics II
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review,
2) ‘Exact’ solution (bulk),
3) Approximate solution (bulk),
4) Approximate solution (ultrathin body),
5) Summary.

ECE 612 Lecture 1: 1D MOS Electrostatics I
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review of some fundamentals,
2) Identify next steps.

Lecture 2: Elementary Theory of the Nanoscale MOSFET
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent lectures.

Lecture 4: Scattering in Nanoscale MOSFETs
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
No MOSFET is ever fully ballistic  there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and that allows us to interpret the results of detailed simulations.

Lecture 5: Application to StateoftheArt FETs
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.

Introduction: Physics of Nanoscale MOSFETs
26 Aug 2008  Online Presentations  Contributor(s): Mark Lundstrom
NCN@Purdue Summer School 2008
National Science Fondation
Intel Corporation
NCN@Purdue Summer School 2008
National Science Fondation
Intel Corporation

Lecture 1: Review of MOSFET Fundamentals
26 Aug 2008  Online Presentations  Contributor(s): Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (driftdiffusion) approach and the meaning of ballistic transport is also included.

Ensemble Monte Carlo Method Described
27 Apr 2008  Online Presentations  Contributor(s): Dragica Vasileska, Gerhard Klimeck, Mark Lundstrom, David K. Ferry
In this presentation we give an overview of the implementation details of the Ensemble Monte Carlo method for mobility and drift velocity calculation in arbitrary materials and arbitrary crystalographic orientations.NSFCareer, ONR

nanoHUB.org: Future Cyberinfrastructure Serving a Community of 60,000 Today
23 Apr 2008  Online Presentations  Contributor(s): George B. Adams III, Gerhard Klimeck, Mark Lundstrom, Michael McLennan
nanoHUB.org provides users with "fingertip access" to over 70 simulation tools for research and education. Users not only launch jobs that are executed on the stateoftheart computational facilities of Open Science Grid and TeraGrid, but also interactively visualize and analyze the results—all via an ordinary web browser. nanoHUB middleware hides the complexity of Grid computing, handling authentication, authorization, file transfer, and visualization, and letting the researcher focus ...

Opening Remarks: Excellence in Computer Simulation
03 Jan 2008  Online Presentations  Contributor(s): Mark Lundstrom
Opening remarks for the oneday forum,
"Excellence in Computer Simulation," which brought together a broad
set of experts to reflect on the future of computational science and
engineering.

Electronics from the Bottom Up: an educational initiative on 21st century electronics
17 Aug 2007  Online Presentations  Contributor(s): Mark Lundstrom, Supriyo Datta, Muhammad A. Alam
In the 1960’s, a group of leaders from industry and academia,
recognized that the age of vacuum tubes was ending and that engineers
would have to be educated differently if they were to realize the
opportunities that the new field of microelectronics presented. The
Semiconductor Electronics Education Committee eventually produced
seven undergraduate textbooks and four films and reshaped the
teaching of electronics. Today, MOSFET channel lengths have shrunk
by a factor of 100 and microelectronics has become nanoelectronics,
but we still teach students very much as they were taught 30 years
ago. Research on molecularscale electronics is giving us a new
understanding of nanoscale devices, but this new knowledge is largely
absent from the semiconductor engineering curriculum. A plethora of
new electronic device technologies are being explored, and, in many
cases, they are not welldescribed by the conventional tools of the
trade. We believe that the time has come to introduce a new approach
to understanding electronic devices. The “Electronics from the Bottom
Up” series will produce a set of educational modules that introduce a
new, and very general, way of understanding small electronic
devices. This presentation discusses the rationale for this
initiative and outlines our plans.

The NanoMOSFET: A brief introduction
17 Aug 2007  Online Presentations  Contributor(s): Mark Lundstrom
MOSFET channel lengths are now well below 100nm, and getting smaller,
but MOSFETs are still modeled and understood much as they were 30
years ago. Seminal work in the 1960’s laid the foundation for our
understanding of the MOSFET, but traditional approaches are based on
concepts that lose validity at the nanoscale. This talk is a brief
introduction to a new approach that provides a sound conceptual
foundation for understanding nanoscale MOSFETs.

ECE 612 Lecture 27: RF CMOS
23 Jan 2007  Online Presentations  Contributor(s): Mark Lundstrom

ECE 612 Lecture 30: UTB SOI Electrostatics
08 Jan 2007  Online Presentations  Contributor(s): Mark Lundstrom

ECE 612 Lecture 26: CMOS Limits
08 Jan 2007  Online Presentations  Contributor(s): Mark Lundstrom

ECE 612 Lecture 22: CMOS Process Steps
04 Jan 2007  Online Presentations  Contributor(s): Mark Lundstrom

ECE 612 Lecture 34: Heterostructure FETs
04 Jan 2007  Online Presentations  Contributor(s): Mark Lundstrom

ECE 612 Lecture 33: Heterojunction Bipolar Transistors
11 Dec 2006  Online Presentations  Contributor(s): Mark Lundstrom

ECE 612 Lecture 32: Heterojunction Diodes
08 Dec 2006  Online Presentations  Contributor(s): Mark Lundstrom

ECE 612 Lecture 31: Heterostructure Fundamentals
08 Dec 2006  Online Presentations  Contributor(s): Mark Lundstrom

ECE 612 Lecture 29: SOI Electrostatics
04 Dec 2006  Online Presentations  Contributor(s): Mark Lundstrom