
ECE 656 Lecture 1: Bandstructure Review
26 Aug 2009  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
 Bandstructure in bulk semiconductors
 Quantum confinement
 Summary
Section 1.2, Lundstrom, Fundamentals of Carrier Transport

ECE 656 Introductory Lecture
26 Aug 2009  Online Presentations  Contributor(s): Mark Lundstrom

ECE 612 Lecture 27: Heterojunction Bipolar Transistors
15 Dec 2008  Online Presentations  Contributor(s): Mark Lundstrom

ECE 612 Lecture 26: Heterostructure FETs
10 Dec 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Introduction,
2) Heterojunction review,
3) Modulation doping,
4) IV characteristics,
5) Device Structure / Materials,
6) Summary.

ECE 612 Lecture 25: SOI Electrostatics
08 Dec 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1. Introduction,
2. General solution,
3. V_{TF} vs. V_{GB},
4. Subthreshold slope,
5. Double gate (DG) SOI,
6. Recap,
7. Discussion,
8. Summary.

ECE 612 Lecture 23: RF CMOS
02 Dec 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Introduction,
2) Small signal model,
3) Transconductance,
4) Selfgain,
5) Gain bandwidth product,
6) Unity power gain,
7) Noise, mismatch, linearity…,
8) Examples

ECE 612 Lecture 21: On Becoming a True Technology Developer
02 Dec 2008  Online Presentations  Contributor(s): Mark Lundstrom

ECE 612 Lecture 22: CMOS Circuit Essentials
24 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) The CMOS inverter,
2) Speed,
3) Power,
4) Circuit performance,
5) Metrics,
6) Limits.
This lecture is an overview of CMOS circuits. For a more detailed presentation, the following lectures from the Fall 2006 teaching of this course should be viewed:
 Lecture 24: CMOS Circuits, Part I (Fall 2006)
 Lecture 25: CMOS Circuits, Part II (Fall 2006)
 Lecture 26: CMOS Limits (Fall 2006)

ECE 612 Lecture 18B: CMOS Process Flow
18 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.
This lecture is a condensed version of the more complete presentation (listed above) by Dr. Fuller.
The author is indebted to Dr. Lynn Fuller of Rochester Institute of Technology for making these materials available.

ECE 612 Lecture 19: Device Variability
14 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Sources of variability,
2) Random dopantfluctuations (RDF),
3) Line edge roughness (LER),
4) Impact on design.

ECE 612 Lecture 18A: CMOS Process Steps
12 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Unit Process Operations,
2) Process Variations.

ECE 612 Lecture 17: Gate Resistance and Interconnects
03 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Gate Resistance,
2) Interconnects,
3) ITRS,
4) Summary.

ECE 612 Lecture 16: MOSFET Leakage
31 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) MOSFET leakage components,
2) Band to band tunneling,
3) Gateinduced drain leakage,
4) Gate leakage,
5) Scaling and ITRS,
6) Summary.

ECE 612 Lecture 15: Series Resistance (and effective channel length)
29 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Effect on IV,
2) Series resistance components,
3) Metalsemiconductor resistance,
4) Other series resistance components,
5) Discussion,
6) Effective Channel Length,
7) Summary.

ECE 612 Lecture 14: VT Engineering
28 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) V_{T} Specification,
2) Uniform Doping,
3) Deltafunction doping, x_{C} = 0,
4) Deltafunction doping, x_{C} > 0,
5) Stepwise uniform,
6) Integral solution.
The doping profiles in modern MOSFETs are complex. Our goal is to develop an intuitive understanding of
how nonuniform doping profiles affect the threshold voltage and 2D electrostatics.

ECE 612 Lecture 12: 2D Electrostatics
28 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Consequences of 2D electrostatics,
2) 2D Poisson equation,
3) Charge sharing model,
4) Barrier lowering,
5) 2D capacitor model,
6) Geometric screening length,
7) Discussion,
8) Summary.

ECE 612 Lecture 11: Effective Mobility
20 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Review of mobility,
2) “Effective”mobility,
3) Physics of the effective mobility,
4) Measuring effective mobility,
5) Discussion,
6) Summary.

ECE 612 Lecture 8: Scattering Theory of the MOSFET II
08 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review and introduction,
2) Scattering theory of the MOSFET,
3) Transmission under low VDS,
4) Transmission under high VDS,
5) Discussion,
6) Summary.

ECE 612 Lecture 7: Scattering Theory of the MOSFET I
08 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review and introduction,
2) Scattering theory of the MOSFET,
3) Transmission under low VDS,
4) Transmission under high VDS,
5) Discussion,
6) Summary.

ECE 612 Lecture 6: MOSFET IV: Velocity saturation
07 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review,
2) Bulk charge theory (approximate),
3) Velocity saturation theory,
4) Summary.

ECE 612 Lecture 5: MOSFET IV: Square law and bulk charge
07 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Introduction,
2) Square law theory,
3) PN junction effects on MOSFETs,
4) Bulk charge theory (exact),
5) Summary.

Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nanodevice to show the connection explicitly.

Lecture 6: Quantum Transport in Nanoscale FETs
12 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use these results to elucidate the physics discussed in previous lessons and to identify issues that still need to be clarified.

ECE 612 Lecture 4: Polysilicon Gates/QM Effects
12 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review, 2) Workfunctionof poly gates,
3) CV with poly depletion,
4) Quantum mechanics and VT,
5) Quantum mechanics and C,
6) Summary.

ECE 612 Introductory Lecture
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom