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ECE 612 Lecture 2: 1D MOS Electrostatics II
0.0 out of 5 stars
09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Review,2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultra-thin body), 5) Summary.
ECE 612 Lecture 1: 1D MOS Electrostatics I
Outline: 1) Review of some fundamentals,2) Identify next steps.
ECE 612 Introductory Lecture
10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Introduction: Physics of Nanoscale MOSFETs
26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nano-device to show the connection explicitly.
Lecture 6: Quantum Transport in Nanoscale FETs
5.0 out of 5 stars
12 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use...
Lecture 5: Application to State-of-the-Art FETs
08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.
Lecture 4: Scattering in Nanoscale MOSFETs
No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and...
Lecture 3B: The Ballistic MOSFET
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
Lecture 3A: The Ballistic MOSFET
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture - just a proper mathematical derivation of the approach that was developed...
Lecture 2: Elementary Theory of the Nanoscale MOSFET
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent lectures.
Lecture 1: Review of MOSFET Fundamentals
4.0 out of 5 stars
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the meaning of ballistic transport is also included.
Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional understanding of electronic devices needs to be complemented with a new perspective that begins...
Ensemble Monte Carlo Method Described
27 Apr 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Gerhard Klimeck, Mark Lundstrom, David K. Ferry
In this presentation we give an overview of the implementation details of the Ensemble Monte Carlo method for mobility and drift velocity calculation in arbitrary materials and arbitrary crystalographic orientations.NSF-Career, ONR
nanoHUB.org: Future Cyberinfrastructure Serving a Community of 60,000 Today
23 Apr 2008 | Online Presentations | Contributor(s): George B. Adams III, Gerhard Klimeck, Mark Lundstrom, Michael McLennan
nanoHUB.org provides users with "fingertip access" to over 70 simulation tools for research and education. Users not only launch jobs that are executed on the state-of-the-art computational facilities of Open Science Grid and TeraGrid, but also interactively visualize and analyze the results—all...
Opening Remarks: Excellence in Computer Simulation
03 Jan 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Opening remarks for the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.
The Nano-MOSFET: A brief introduction
17 Aug 2007 | Online Presentations | Contributor(s): Mark Lundstrom
MOSFET channel lengths are now well below 100nm, and getting smaller, but MOSFETs are still modeled and understood much as they were 30 years ago. Seminal work in the 1960’s laid the foundation for our understanding of the MOSFET, but traditional approaches are based on concepts that lose...
Electronics from the Bottom Up: an educational initiative on 21st century electronics
17 Aug 2007 | Online Presentations | Contributor(s): Mark Lundstrom, Supriyo Datta, Muhammad A. Alam
In the 1960’s, a group of leaders from industry and academia, recognized that the age of vacuum tubes was ending and that engineers would have to be educated differently if they were to realize the opportunities that the new field of microelectronics presented. The Semiconductor Electronics...
ECE 612 Lecture 27: RF CMOS
23 Jan 2007 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 26: CMOS Limits
08 Jan 2007 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 30: UTB SOI Electrostatics
ECE 612 Lecture 22: CMOS Process Steps
04 Jan 2007 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 34: Heterostructure FETs
ECE 612 Lecture 33: Heterojunction Bipolar Transistors
11 Dec 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 32: Heterojunction Diodes
08 Dec 2006 | Online Presentations | Contributor(s): Mark Lundstrom