ECE 612 Lecture 14: VT Engineering
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28 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) VT Specification,2) Uniform Doping,3) Delta-function doping, xC = 0,4) Delta-function doping, xC > 0,5) Stepwise uniform,6) Integral solution.The doping profiles in modern MOSFETs are complex. Our goal is to develop an intuitive understanding of how non-uniform doping profiles affect...
Electronic Transport in Semiconductors (Introductory Lecture)
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25 Aug 2004 | Online Presentations | Contributor(s): Mark Lundstrom
Welcome to the ECE 656 Introductory lecture. The objective of the course is to develop a clear, physical understanding of charge carrier transport in bulk semiconductors and in small semiconductor devices.The emphasis is on transport physics and its consequences in a device context. The course...
ECE 656 Lecture 4: Density of States - Density of Modes
10 Sep 2009 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:Density of states Example: graphene Density of modes Example: graphene Summary
ECE 612 Lecture 11: Effective Mobility
20 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:1) Review of mobility,2) “Effective”mobility,3) Physics of the effective mobility,4) Measuring effective mobility,5) Discussion,6) Summary.
Lecture 2: Elementary Theory of the Nanoscale MOSFET
08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent lectures.
ECE 612 Lecture 12: Subthreshold Conduction
25 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 14: Effective Mobility
02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 18B: CMOS Process Flow
18 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom
For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.This lecture is a condensed version of the more complete presentation (listed above) by Dr. Fuller.
ECE 612 Lecture 7: Scattering Theory of the MOSFET I
08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.
Lecture 6: Graphene PN Junctions
22 Sep 2009 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:IntroductionElectron optics in grapheneTransmission across NP junctionsConductance of PN and NN junctionsDiscussionSummary
A Top-Down Introduction to the NEGF Approach
14 Jun 2004 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 6: MOSFET IV: Velocity saturation
07 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Review,2) Bulk charge theory (approximate),3) Velocity saturation theory,4) Summary.
Lecture 3: Low Bias Transport in Graphene: An Introduction
18 Sep 2009 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:Introduction and ObjectivesTheoryExperimental approachResultsDiscussionSummaryLecture notes are available for this lecture.
ECE 656 Introductory Lecture
26 Aug 2009 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 1: MOSFET Review
08 Aug 2006 | Online Presentations | Contributor(s): Mark Lundstrom
From Lilienfeld to Landauer: Understanding the nanoscale transistor
29 Apr 2013 | Online Presentations | Contributor(s): Mark Lundstrom
The talk is organized around the so-called Virtual Source model of the MOSFET and will show how the traditional view of the MOSFET (which dates from the 1960s) can be adapted to todays nanoscale transistors in a physically insightful and simple way. The talk aims to show that understanding the...
Nanoelectronics 101
28 Aug 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Semiconductor device technology has transformed our world with supercomputers, personal computers, cell phones, ipods, and much more that we now take for granted. Moore's Law, posited by Intel co-founder Gordon Moore in 1965, states that the number of transistors (the basic building blocks...
ECE 656 Lecture 25: Phonon Scattering II
07 Nov 2011 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:Reviewphononselectron-phonon couplingEnergy-momentum conservationMathematical formulationExampleSummary
ECE 612 Lecture 15: Series Resistance (and effective channel length)
29 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:1) Effect on I-V,2) Series resistance components,3) Metal-semiconductor resistance,4) Other series resistance components,5) Discussion,6) Effective Channel Length,7) Summary.
ECE 656 Lecture 23: Phonon Scattering I
10 Nov 2009 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:About phononsElectron-phonon couplingEnergy-momentum conservationSummary
Lecture 3A: The Ballistic MOSFET
10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture - just a proper mathematical derivation of the approach that was developed...
ECE 656 Lecture 12: Boltzmann Transport Equation
Outline:IntroductionSemi-classical electron dynamics Boltzmann Transport Equation (BTE) ScatteringDiscussionSummary
ECE 612 Lecture 22: CMOS Circuit Essentials
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24 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) The CMOS inverter,2) Speed,3) Power,4) Circuit performance,5) Metrics,6) Limits.This lecture is an overview of CMOS circuits. For a more detailed presentation, the following lectures from the Fall 2006 teaching of this course should be viewed:Lecture 24: CMOS Circuits, Part I (Fall...
ECE 612 Lecture 8: Scattering Theory of the MOSFET II
ECE 612 Lecture 26: Heterostructure FETs
10 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:1) Introduction,2) Heterojunction review,3) Modulation doping,4) I-V characteristics,5) Device Structure / Materials,6) Summary.