
ECE 656 Lecture 3: General Model for Transport
03 Sep 2009  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
 General model for lowfield transport
 Modes
 Transmission
 Linear (near equilibrium) transport
 Summary

ECE 656 Lecture 2: Sums in kspace/Integrals in Energy Space
01 Sep 2009  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
 Density of states in kspace
 Example
 Working in energy space
 Discussion
 Summary

ECE 656 Lecture 1: Bandstructure Review
26 Aug 2009  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
 Bandstructure in bulk semiconductors
 Quantum confinement
 Summary
Section 1.2, Lundstrom, Fundamentals of Carrier Transport

ECE 656 Introductory Lecture
26 Aug 2009  Online Presentations  Contributor(s): Mark Lundstrom

ECE 656: Electronic Transport in Semiconductors (Fall 2009)
26 Aug 2009  Courses  Contributor(s): Mark Lundstrom
This course develops a basic understanding of the theory of charge carrier transport in semiconductors and semiconductor devices and an ability to apply it to the anslysis of experiments and devices.

ECE 612 Lecture 27: Heterojunction Bipolar Transistors
15 Dec 2008  Online Presentations  Contributor(s): Mark Lundstrom

ECE 612 Lecture 26: Heterostructure FETs
10 Dec 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Introduction,
2) Heterojunction review,
3) Modulation doping,
4) IV characteristics,
5) Device Structure / Materials,
6) Summary.

ECE 612 Lecture 25: SOI Electrostatics
08 Dec 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1. Introduction,
2. General solution,
3. V_{TF} vs. V_{GB},
4. Subthreshold slope,
5. Double gate (DG) SOI,
6. Recap,
7. Discussion,
8. Summary.

ECE 612 Lecture 23: RF CMOS
02 Dec 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Introduction,
2) Small signal model,
3) Transconductance,
4) Selfgain,
5) Gain bandwidth product,
6) Unity power gain,
7) Noise, mismatch, linearity…,
8) Examples

ECE 612 Lecture 21: On Becoming a True Technology Developer
02 Dec 2008  Online Presentations  Contributor(s): Mark Lundstrom

ECE 612 Lecture 22: CMOS Circuit Essentials
24 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) The CMOS inverter,
2) Speed,
3) Power,
4) Circuit performance,
5) Metrics,
6) Limits.
This lecture is an overview of CMOS circuits. For a more detailed presentation, the following lectures from the Fall 2006 teaching of this course should be viewed:
 Lecture 24: CMOS Circuits, Part I (Fall 2006)
 Lecture 25: CMOS Circuits, Part II (Fall 2006)
 Lecture 26: CMOS Limits (Fall 2006)

ECE 612 Lecture 18B: CMOS Process Flow
18 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.
This lecture is a condensed version of the more complete presentation (listed above) by Dr. Fuller.
The author is indebted to Dr. Lynn Fuller of Rochester Institute of Technology for making these materials available.

ECE 612 Lecture 19: Device Variability
14 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Sources of variability,
2) Random dopantfluctuations (RDF),
3) Line edge roughness (LER),
4) Impact on design.

ECE 612 Lecture 18A: CMOS Process Steps
12 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Unit Process Operations,
2) Process Variations.

ECE 612 Lecture 17: Gate Resistance and Interconnects
03 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Gate Resistance,
2) Interconnects,
3) ITRS,
4) Summary.

ECE 612 Lecture 16: MOSFET Leakage
31 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) MOSFET leakage components,
2) Band to band tunneling,
3) Gateinduced drain leakage,
4) Gate leakage,
5) Scaling and ITRS,
6) Summary.

ECE 612 Lecture 15: Series Resistance (and effective channel length)
29 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Effect on IV,
2) Series resistance components,
3) Metalsemiconductor resistance,
4) Other series resistance components,
5) Discussion,
6) Effective Channel Length,
7) Summary.

ECE 612 Lecture 14: VT Engineering
28 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) V_{T} Specification,
2) Uniform Doping,
3) Deltafunction doping, x_{C} = 0,
4) Deltafunction doping, x_{C} > 0,
5) Stepwise uniform,
6) Integral solution.
The doping profiles in modern MOSFETs are complex. Our goal is to develop an intuitive understanding of
how nonuniform doping profiles affect the threshold voltage and 2D electrostatics.

ECE 612 Lecture 12: 2D Electrostatics
28 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Consequences of 2D electrostatics,
2) 2D Poisson equation,
3) Charge sharing model,
4) Barrier lowering,
5) 2D capacitor model,
6) Geometric screening length,
7) Discussion,
8) Summary.

ECE 612 Lecture 11: Effective Mobility
20 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Review of mobility,
2) “Effective”mobility,
3) Physics of the effective mobility,
4) Measuring effective mobility,
5) Discussion,
6) Summary.

ECE 612 Lecture 8: Scattering Theory of the MOSFET II
08 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review and introduction,
2) Scattering theory of the MOSFET,
3) Transmission under low VDS,
4) Transmission under high VDS,
5) Discussion,
6) Summary.

ECE 612 Lecture 7: Scattering Theory of the MOSFET I
08 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review and introduction,
2) Scattering theory of the MOSFET,
3) Transmission under low VDS,
4) Transmission under high VDS,
5) Discussion,
6) Summary.

ECE 612 Lecture 6: MOSFET IV: Velocity saturation
07 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review,
2) Bulk charge theory (approximate),
3) Velocity saturation theory,
4) Summary.

ECE 612 Lecture 5: MOSFET IV: Square law and bulk charge
07 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Introduction,
2) Square law theory,
3) PN junction effects on MOSFETs,
4) Bulk charge theory (exact),
5) Summary.

Notes on FermiDirac Integrals (3rd Edition)
23 Sep 2008  Papers  Contributor(s): Raseong Kim, Mark Lundstrom
FermiDirac integrals appear frequently in semiconductor problems, so an understanding of their properties is essential. The purpose of these notes is to collect in one place, some basic information about FermiDirac integrals and their properties.
We also present Matlab functions (in a zipped file) that calculate FermiDirac integrals (the "script F" defined by Blakemore (1982)) in three different ways.
The function, "FD_int_approx.m", evaluates FermiDirac integrals using analytic ...