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ECE 612 Lecture 5: MOSFET IV: Square law and bulk charge
0.0 out of 5 stars
07 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Introduction,2) Square law theory,3) PN junction effects on MOSFETs,4) Bulk charge theory (exact),5) Summary.
ECE 612 Lecture 4: Polysilicon Gates/QM Effects
12 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Review, 2) Workfunctionof poly gates,3) CV with poly depletion,4) Quantum mechanics and VT,5) Quantum mechanics and C,6) Summary.
ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.
ECE 612 Lecture 2: 1D MOS Electrostatics II
Outline: 1) Review,2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultra-thin body), 5) Summary.
ECE 612 Lecture 1: 1D MOS Electrostatics I
Outline: 1) Review of some fundamentals,2) Identify next steps.
ECE 612 Introductory Lecture
10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
24 Oct 2012 | Teaching Materials | Contributor(s): Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning . (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret .) The objective is to understand how to treat MOS electrostatics without...
ECE 612: Nanoscale Transistors (Fall 2008)
5.0 out of 5 stars
27 Aug 2008 | Courses | Contributor(s): Mark Lundstrom
Additional material related to the topics discussed in this course course is available at https://nanohub.org/courses/NT Fall 2008This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development...
Introduction: Physics of Nanoscale MOSFETs
26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nano-device to show the connection explicitly.
Lecture 6: Quantum Transport in Nanoscale FETs
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use...
Lecture 5: Application to State-of-the-Art FETs
08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.
Lecture 4: Scattering in Nanoscale MOSFETs
No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and...
Lecture 3B: The Ballistic MOSFET
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
Lecture 3A: The Ballistic MOSFET
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture - just a proper mathematical derivation of the approach that was developed...
Lecture 2: Elementary Theory of the Nanoscale MOSFET
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent lectures.
Lecture 1: Review of MOSFET Fundamentals
4.0 out of 5 stars
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the meaning of ballistic transport is also included.
Physics of Nanoscale MOSFETs
3.5 out of 5 stars
26 Aug 2008 | Courses | Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of...
2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008 | Workshops | Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two...
Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional understanding of electronic devices needs to be complemented with a new perspective that begins...
Semiconductor Device Theory Exercises
30 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck, Mark Lundstrom
This collection of problems should help the students to better understand Semiconductor Device Physics on a fundamental and more complex level. Crystal lattices and Miller indiciesFrom 1 well to 2 wells to 5 wells to periodic potentialsPeriodic potentials and bandstructureBandstructure...
Cylindrical CNT MOSFET Simulator
3.0 out of 5 stars
22 Jul 2008 | Tools | Contributor(s): Gloria Wahyu Budiman, Yunfei Gao, Xufeng Wang, Siyu Koswatta, Mark Lundstrom
Simulate 2-D electrons transport in CNTFET
Ensemble Monte Carlo Method Described
27 Apr 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Gerhard Klimeck, Mark Lundstrom, David K. Ferry
In this presentation we give an overview of the implementation details of the Ensemble Monte Carlo method for mobility and drift velocity calculation in arbitrary materials and arbitrary crystalographic orientations.NSF-Career, ONR
Bulk Monte Carlo Lab
27 Apr 2008 | Tools | Contributor(s): Dragica Vasileska, Mark Lundstrom, Stephen M. Goodnick, Gerhard Klimeck
This tool calculates the bulk values of the carrier drift velocity and average electron energy in any material in which the conduction band is represented by a three valley model. Examples include Si, Ge and GaAs.
nanoHUB.org: Future Cyberinfrastructure Serving a Community of 60,000 Today
23 Apr 2008 | Online Presentations | Contributor(s): George B. Adams III, Gerhard Klimeck, Mark Lundstrom, Michael McLennan
nanoHUB.org provides users with "fingertip access" to over 70 simulation tools for research and education. Users not only launch jobs that are executed on the state-of-the-art computational facilities of Open Science Grid and TeraGrid, but also interactively visualize and analyze the results—all...