
Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nanodevice to show the connection explicitly.

Lecture 6: Quantum Transport in Nanoscale FETs
12 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use these results to elucidate the physics discussed in previous lessons and to identify issues that still need to be clarified.

ECE 612 Lecture 4: Polysilicon Gates/QM Effects
12 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review, 2) Workfunctionof poly gates,
3) CV with poly depletion,
4) Quantum mechanics and VT,
5) Quantum mechanics and C,
6) Summary.

ECE 612 Introductory Lecture
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom

Lecture 3A: The Ballistic MOSFET
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture  just a proper mathematical derivation of the approach that was developed intuitively in Lecture 2.

Lecture 3B: The Ballistic MOSFET
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.

Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional understanding of electronic devices needs to be complemented with a new perspective that begins from the nanoscale. My objectives in this talk are: 1) to describe a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of nanoscale dimensions, and 2) to introduce the “bottom up” approach, a way of understanding nanoscale electronics very generally. This talk will provide a starting point for those interested in exploring the electronics from the bottom up approach through the resources of nanoHUB.org.

ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Short review,
2) Gate voltage / surface potential relation,
3) The flatbandvoltage,
4) MOS capacitance vs. voltage,
5) Gate voltage and inversion layer charge.

ECE 612 Lecture 2: 1D MOS Electrostatics II
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review,
2) ‘Exact’ solution (bulk),
3) Approximate solution (bulk),
4) Approximate solution (ultrathin body),
5) Summary.

ECE 612 Lecture 1: 1D MOS Electrostatics I
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review of some fundamentals,
2) Identify next steps.

Lecture 2: Elementary Theory of the Nanoscale MOSFET
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent lectures.

Lecture 4: Scattering in Nanoscale MOSFETs
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
No MOSFET is ever fully ballistic  there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and that allows us to interpret the results of detailed simulations.

Lecture 5: Application to StateoftheArt FETs
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.

ECE 612: Nanoscale Transistors (Fall 2008)
27 Aug 2008  Courses  Contributor(s): Mark Lundstrom
Additional material related to the topics discussed in this course course is available at https://nanohub.org/courses/NT
Fall 2008
This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies. The course consists of three parts. Part 1 treats silicon MOS and MOSFET fundamentals as well as second order effects...

Introduction: Physics of Nanoscale MOSFETs
26 Aug 2008  Online Presentations  Contributor(s): Mark Lundstrom
NCN@Purdue Summer School 2008
National Science Fondation
Intel Corporation
NCN@Purdue Summer School 2008
National Science Fondation
Intel Corporation

2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008  Workshops  Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottomup perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two contacts. For carrier transport, it means beginning at the nanoscale where ballistic transport, atomistic effects, and stochastic effects dominate. For MOSFETs, it means beginning with the “ultimate” MOSFET. Electronics from the Bottom Up does not mean ab initio numerical simulations – it means beginning with concepts and approaches that are both simple and sound at the nanoscale rather than extrapolated from the microscale.

Physics of Nanoscale MOSFETs
26 Aug 2008  Courses  Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of nanoscale dimensions. lecture 1 reviews traditional MOSFET theory, and Lecture 2 presents the new approach in its simplest form. Lectures 3A and 3B describe the mathematical treatment of ballistic …

Lecture 1: Review of MOSFET Fundamentals
26 Aug 2008  Online Presentations  Contributor(s): Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (driftdiffusion) approach and the meaning of ballistic transport is also included.

Bulk Monte Carlo Lab
27 Apr 2008  Tools  Contributor(s): Dragica Vasileska, Mark Lundstrom, Stephen M. Goodnick, Gerhard Klimeck
This tool calculates the bulk values of the carrier drift velocity and average electron energy in any material in which the conduction band is represented by a three valley model. Examples include Si, Ge and GaAs.

Cylindrical CNT MOSFET Simulator
22 Jul 2008  Tools  Contributor(s): Gloria Wahyu Budiman, Yunfei Gao, Xufeng Wang, Siyu Koswatta, Mark Lundstrom
Simulate 2D electrons transport in CNTFET

Ensemble Monte Carlo Method Described
27 Apr 2008  Online Presentations  Contributor(s): Dragica Vasileska, Gerhard Klimeck, Mark Lundstrom, David K. Ferry
In this presentation we give an overview of the implementation details of the Ensemble Monte Carlo method for mobility and drift velocity calculation in arbitrary materials and arbitrary crystalographic orientations.NSFCareer, ONR

nanoHUB.org: Future Cyberinfrastructure Serving a Community of 60,000 Today
23 Apr 2008  Online Presentations  Contributor(s): George B. Adams III, Gerhard Klimeck, Mark Lundstrom, Michael McLennan
nanoHUB.org provides users with "fingertip access" to over 70 simulation tools for research and education. Users not only launch jobs that are executed on the stateoftheart computational facilities of Open Science Grid and TeraGrid, but also interactively visualize and analyze the results—all via an ordinary web browser. nanoHUB middleware hides the complexity of Grid computing, handling authentication, authorization, file transfer, and visualization, and letting the researcher focus ...

Homework Exercise on Drift & Diffusion in Bulk Semiconductors  considerations of lifetime
30 Mar 2008  Teaching Materials  Contributor(s): Mark Lundstrom, Saumitra Raj Mehrotra
The tutorial questions based on Drift Diffusion Lab v1.0 available online at Drift Diffusion Lab. Students are asked to explore the concepts of Drift, Diffusion, Quasi Fermi Levels, and response to light. Analytical derivations are requested and considerations of lifetime are considered.NCN@Purdue

Opening Remarks: Excellence in Computer Simulation
03 Jan 2008  Online Presentations  Contributor(s): Mark Lundstrom
Opening remarks for the oneday forum,
"Excellence in Computer Simulation," which brought together a broad
set of experts to reflect on the future of computational science and
engineering.

Excellence in Computer Simulation
19 Dec 2007  Workshops  Contributor(s): Mark Lundstrom, Jeffrey B. Neaton, Jeffrey C Grossman
Computational science is frequently labeled as a third branch of science  equal in standing with theory and experiment, and computational engineering is now an essential component of technology development and manufacturing. The successes of computational science and engineering (CSE) over the past twothree decades have been substantial, but at the beginning of a new century, it is useful to reflect on what has been accomplished, on how computational science and engineering are evolving, and ...