ECE 612 Lecture 17: Gate Resistance and Interconnects
0.0 out of 5 stars
03 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:1) Gate Resistance,2) Interconnects,3) ITRS,4) Summary.
ECE 612 Lecture 16: MOSFET Leakage
31 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:1) MOSFET leakage components,2) Band to band tunneling,3) Gate-induced drain leakage,4) Gate leakage,5) Scaling and ITRS,6) Summary.
ECE 612 Lecture 15: Series Resistance (and effective channel length)
5.0 out of 5 stars
29 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:1) Effect on I-V,2) Series resistance components,3) Metal-semiconductor resistance,4) Other series resistance components,5) Discussion,6) Effective Channel Length,7) Summary.
ECE 612 Lecture 14: VT Engineering
28 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) VT Specification,2) Uniform Doping,3) Delta-function doping, xC = 0,4) Delta-function doping, xC > 0,5) Stepwise uniform,6) Integral solution.The doping profiles in modern MOSFETs are complex. Our goal is to develop an intuitive understanding of how non-uniform doping profiles affect...
ECE 612 Lecture 12: 2D Electrostatics
Outline:1) Consequences of 2D electrostatics,2) 2D Poisson equation,3) Charge sharing model,4) Barrier lowering,5) 2D capacitor model,6) Geometric screening length,7) Discussion,8) Summary.
ECE 612 Lecture 11: Effective Mobility
20 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:1) Review of mobility,2) “Effective”mobility,3) Physics of the effective mobility,4) Measuring effective mobility,5) Discussion,6) Summary.
ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances
25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom
Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.
ECE 612 Lecture 9: Subthreshold Conduction
Please view ECE 612 Lecture 12: Subthreshold Conduction from the 2006 teaching.
Notes on Fermi-Dirac Integrals (4th Edition)
23 Sep 2008 | Papers | Contributor(s): raseong kim, Xufeng Wang, Mark Lundstrom
Fermi-Dirac integrals appear frequently in semiconductor problems, so an understanding of their properties is essential. The purpose of these notes is to collect in one place, some basic information about Fermi-Dirac integrals and their properties.We also present Matlab functions (in a zipped...
ECE 612 Lecture 8: Scattering Theory of the MOSFET II
08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.
ECE 612 Lecture 7: Scattering Theory of the MOSFET I
ECE 612 Lecture 6: MOSFET IV: Velocity saturation
07 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Review,2) Bulk charge theory (approximate),3) Velocity saturation theory,4) Summary.
ECE 612 Lecture 5: MOSFET IV: Square law and bulk charge
Outline: 1) Introduction,2) Square law theory,3) PN junction effects on MOSFETs,4) Bulk charge theory (exact),5) Summary.
ECE 612 Lecture 4: Polysilicon Gates/QM Effects
12 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Review, 2) Workfunctionof poly gates,3) CV with poly depletion,4) Quantum mechanics and VT,5) Quantum mechanics and C,6) Summary.
ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.
ECE 612 Lecture 2: 1D MOS Electrostatics II
Outline: 1) Review,2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultra-thin body), 5) Summary.
ECE 612 Lecture 1: 1D MOS Electrostatics I
Outline: 1) Review of some fundamentals,2) Identify next steps.
ECE 612 Introductory Lecture
10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
24 Oct 2012 | Teaching Materials | Contributor(s): Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...
ECE 612: Nanoscale Transistors (Fall 2008)
3.5 out of 5 stars
27 Aug 2008 | Courses | Contributor(s): Mark Lundstrom
Additional material related to the topics discussed in this course course is available at https://nanohub.org/courses/NT Fall 2008 This course examines the device physics of advanced transistors and the process, device, circuit, and systems...
Introduction: Physics of Nanoscale MOSFETs
26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nano-device to show the connection explicitly.
Lecture 6: Quantum Transport in Nanoscale FETs
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use...
Lecture 5: Application to State-of-the-Art FETs
08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.
Lecture 4: Scattering in Nanoscale MOSFETs
No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and...