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ECE 612 Introductory Lecture (Fall 06)
4.0 out of 5 stars
08 Aug 2006 | Online Presentations | Contributor(s): Mark Lundstrom
NanoMOS 3.0: First-Time User Guide
0.0 out of 5 stars
06 Jun 2006 | Online Presentations | Contributor(s): Kurtis Cantley, Mark Lundstrom
This tutorial is an introduction to the nanoMOS simulation tool for new users. Descriptions of input and output parameters are included, along with new features associated with the Rappture interface. There are also descriptions of nine examples that are loadable in the new version to help the...
9.9 out of 5 stars
19 May 2006 | Tools | Contributor(s): , Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Yang Liu, Yunfei Gao, Xufeng Wang, Mark Lundstrom
2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs
Band Structure Lab
5.0 out of 5 stars
19 May 2006 | Tools | Contributor(s): Samik Mukherjee, Kai Miao, Abhijeet Paul, Neophytos Neophytou, Raseong Kim, Junzhe Geng, Michael Povolotskyi, Tillmann Christoph Kubis, Arvind Ajoy, Bozidar Novakovic, James Fonseca, Hesameddin Ilatikhameneh, Sebastian Steiger, Michael McLennan, Mark Lundstrom, Gerhard Klimeck
Computes the electronic and phonon structure of various materials in the spatial configuration of bulk , quantum wells, and wires
Nanoscale Transistors: Advanced VLSI Devices (Introductory Lecture)
20 Apr 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Welcome to the ECE 612 Introductory/Overview lecture. This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies.
4.5 out of 5 stars
30 Mar 2006 | Tools | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng
SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.
3.0 out of 5 stars
13 Mar 2006 | Tools | Contributor(s): Neophytos Neophytou, Shaikh S. Ahmed, POLIZZI ERIC, Gerhard Klimeck, Mark Lundstrom
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
14 Feb 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
A Primer on Semiconductor Device Simulation
23 Jan 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Computer simulation is now an essential tool for the research and development of semiconductor processes and devices, but to use a simulation tool intelligently, one must know what's "under the hood." This talk is a tutorial introduction designed for someone using semiconductor device simulation...
Homework for PN Junctions: Depletion Approximation (ECE 305)
06 Jan 2006 | Teaching Materials | Contributor(s): Mark Lundstrom, David Janes
This homework assignment is part of ECE 305 "Semiconductor Device Fundamentals" (Purdue University). It contains 7 problems which lead students through a comparison of the depletion approximation and the exact analysis of a PN junction diode.
Ballistic Nanotransistors - Learning Module
07 Dec 2005 | Series | Contributor(s): Mark Lundstrom
This resource is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new insights into the performance and limits of nanoscale MOSFETs. The materials presented below introduces the...
An Electrical Engineering Perspective on Molecular Electronics
26 Oct 2005 | Online Presentations | Contributor(s): Mark Lundstrom
After forty years of advances in integrated circuit technology, microelectronics is undergoing a transformation to nanoelectronics. Modern day MOSFETs now have channel lengths that are less than 50 nm long, and billion transistor logic chips have arrived. Moore's Law continues, but the end of...
Simple Theory of the Ballistic MOSFET
11 Oct 2005 | Online Presentations | Contributor(s): Mark Lundstrom
Silicon nanoelectronics has become silicon nanoelectronics, but we still analyze, design, and think about MOSFETs in more or less in the same way that we did 30 years ago. In this talk, I will describe a simple analysis of the ballistic MOSFET. No MOSFET is truly ballistic, but approaching this...
Exercises for FETToy
11 Oct 2005 | Teaching Materials | Contributor(s): Mark Lundstrom
This series of exercises uses the FETToy program to illustrate some of the key physical concepts for nanotransistors.
Notes on the Ballistic MOSFET
08 Oct 2005 | Papers | Contributor(s): Mark Lundstrom
When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance between scattering events (the so-called mean-free-path, λ) is much shorter than the device. When...
Moore's Law Forever?
13 Jul 2005 | Online Presentations | Contributor(s): Mark Lundstrom
This talk covers the big technological changes in the 20th and 21st century that were correctly predicted by Gordon Moore in 1965. Moore's Law states that the number of transistors on a silicon chip doubles every technology generation. In 1960s terms that meant every 12 months and currently this...
Nanoelectronics: The New Frontier?
18 Apr 2005 | Online Presentations | Contributor(s): Mark Lundstrom
After forty years of advances in integrated circuit technology, microelectronics is undergoing a transformation to nanoelectronics. Modern day MOSFETs now have channel lengths of only 50 nm, and billion transistor logic chips have arrived. Moore’s Law continues, but the end of MOSFET scaling is...
06 Apr 2005 | Online Presentations | Contributor(s): Mark Lundstrom
This presentation is an overview of the Network for Computational Nanotechnology (NCN) presented at the first NCN Student Conference in April 2005. It is intended to give students an understanding of the NCN's vision and mission.
Nanotechnology 501 Lecture Series
22 Feb 2005 | Series | Contributor(s): Gerhard Klimeck (editor), Mark Lundstrom (editor), Joseph M. Cychosz (editor)
Welcome to Nanotechnology 501, a series of lectures designed to provide an introduction to nanotechnology. This series is similar to our popular lecture series Nanotechnology 101, but it is directed at the graduate students and professionals.
Electronic Transport in Semiconductors (Introductory Lecture)
25 Aug 2004 | Online Presentations | Contributor(s): Mark Lundstrom
Welcome to the ECE 656 Introductory lecture. The objective of the course is to develop a clear, physical understanding of charge carrier transport in bulk semiconductors and in small semiconductor devices.The emphasis is on transport physics and its consequences in a device context. The course...
04 Aug 2004 | Online Presentations | Contributor(s): Mark Lundstrom
The transistor is the basic element of electronic systems. The integrated circuits inside today's personal computers, cell phones, PDA's, etc., contain hundreds of millions of transistors on a chip of silicon about 2 cm on a side. Each technology generation, engineers shrink the size of...
NSF NCN Overview
26 Jul 2004 | Online Presentations | Contributor(s): Mark Lundstrom
NSF NCN Overview
07 Jul 2004 | Online Presentations | Contributor(s): Mark Lundstrom
In non-specialist language, this talk introduces CMOS technology used for modern electronics. Beginning with an explanation of "CMOS," the speaker relates basic system considerations of transistor design and identifies future challenges for CMOS electronics. Anyone with an elementary...
A Top-Down Introduction to the NEGF Approach
14 Jun 2004 | Online Presentations | Contributor(s): Mark Lundstrom
A Top-Down Introduction to the NEGF Approach
Theory of Ballistic Nanotransistors
27 Nov 2002 | Papers | Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to...