2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008 | Workshops | Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two contacts. For carrier transport, it means beginning at the nanoscale where ballistic transport, atomistic effects, and stochastic effects dominate. For MOSFETs, it means beginning with the “ultimate” MOSFET. Electronics from the Bottom Up does not mean ab initio numerical simulations – it means beginning with concepts and approaches that are both simple and sound at the nanoscale rather than extrapolated from the microscale.
2009 NCN@Purdue Summer School: Electronics from the Bottom Up
22 Sep 2009 | Workshops | Contributor(s): Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller
The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.
2011 NCN Summer School: Welcome and Introduction
20 Jul 2011 | Online Presentations | Contributor(s): Mark Lundstrom
“Electronics from the Bottom Up” is an educational initiative designed to bring a new perspective to the field of nano device engineering. It is co-sponsored by the Intel Foundation and the Network for Computational Nanotechnology.
A Primer on Semiconductor Device Simulation
23 Jan 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Computer simulation is now an essential tool for the research and development of semiconductor processes and devices, but to use a simulation
tool intelligently, one must know what's "under the hood." This talk
is a tutorial introduction designed for someone using semiconductor
device simulation for the first time. After reviewing the
semiconductor equations, I will briefly describe how one solves them
"exactly" on a computer. I'll then discuss an example device
simulation program and conclude with some thoughts about how to
effectively use simulation in practice.
A Primer on Semiconductor Fundamentals
10 Jan 2016 | Teaching Materials | Contributor(s): Mark Lundstrom
This primer quickly summarize some important semiconductor fundamentals. For those acquainted with semiconductors, this may be useful as a brief refresher. For those just getting started with semiconductors, my hope is that this primer provides just enough understanding to allow you to begin exploring semiconductor devices.
A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study
the effect of channel access geometries on device performance. This simulation scheme solves the
non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the
effect of scattering using a simple approximation inspired by Büttiker. It is based on an expansion
of the device Hamiltonian in coupled mode-space. Simulation results are used to highlight quan-
tum effects and discuss the importance of scattering when examining the transport properties of
nanoscale transistors with differing channel access geometries. Additionally, an efficient domain
decomposition scheme for evaluating the performance of nanoscale transistors is also presented.
This paper highlights the importance of scattering in understanding the performance of transistors
with different channel access geometries.
A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
30 Oct 2006 | Papers | Contributor(s): Jing Wang, Eric Polizzi, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future
integrated circuits, and simulations will be important for understanding its device physics and
assessing its ultimate performance limits. In this work, we present a three-dimensional quantum
mechanical simulation approach to treat various SNWTs within the effective-mass approximation.
We begin by assuming ballistic transport, which gives the upper performance limit of the devices.
The use of a mode space approach (either coupled or uncoupled) produces high computational
efficiency that makes our 3D quantum simulator practical for extensive device simulation and
design. Scattering in SNWTs is then treated by a simple model that uses so-called Büttiker probes,
which was previously used in metal-oxide-semiconductor field effect transistor (MOSFET)
simulations. Using this simple approach, the effects of scattering on both internal device
characteristics and terminal currents can be examined, which enables our simulator to be used for
the exploration of realistic performance limits of SNWTs.
A Top-Down Introduction to the NEGF Approach
14 Jun 2004 | Online Presentations | Contributor(s): Mark Lundstrom
A Top-Down Introduction to the NEGF Approach
Along for the Ride: Reflections on the Past, Present, and Future of Nanoelectronics
25 Jun 2015 | Online Presentations | Contributor(s): Mark Lundstrom
Network for Computational Nanotechnology, NCN SURF 2015
An Electrical Engineering Perspective on Molecular Electronics
26 Oct 2005 | Online Presentations | Contributor(s): Mark Lundstrom
After forty years of advances in integrated circuit technology, microelectronics is undergoing a transformation to nanoelectronics. Modern day MOSFETs now have channel lengths that are less than 50 nm long, and billion transistor logic chips have arrived. Moore's Law continues, but the end of MOSFET scaling is in sight. At the same time, there are exciting new advances in molecular electronics and related fields. How long will the evolutionary approaches that have been so successful for 40 years continue to fuel progress?
Assessing the MVS Model for Nanotransistors
25 Mar 2014 | Presentation Materials | Contributor(s): Siyang Liu, Xingshu Sun, Mark Lundstrom
The MIT Virtual Source model  is a recently developed compact model for nanoscale transistor. It is a semi-empirical model based on the physics of electron transport at nanoscale. The model requires only a few input parameters, most of which can be obtained from experimental data. This model produces an accurate result as well as maintains simplicity.
Ballistic Nanotransistors - Learning Module
07 Dec 2005 | Learning Modules | Contributor(s): Mark Lundstrom
This resource is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new insights into the performance and limits of nanoscale MOSFETs. The materials presented below introduces the basic theory and shows how it can be applied to current problems in device research. The concepts are illustrated by exercises that make use of live simulations with the program, FETToy.
Band Structure Lab
19 May 2006 | Tools | Contributor(s): Samik Mukherjee, Kai Miao, Abhijeet Paul, Neophytos Neophytou, Raseong Kim, Junzhe Geng, Michael Povolotskyi, Tillmann Christoph Kubis, Arvind Ajoy, Bozidar Novakovic, James Fonseca, Hesameddin Ilatikhameneh, Sebastian Steiger, Michael McLennan, Mark Lundstrom, Gerhard Klimeck
Computes the electronic and phonon structure of various materials in the spatial configuration of bulk , quantum wells, and wires
Bulk Monte Carlo Lab
27 Apr 2008 | Tools | Contributor(s): Dragica Vasileska, Mark Lundstrom, Stephen M. Goodnick, Gerhard Klimeck
This tool calculates the bulk values of the carrier drift velocity and average electron energy in any material in which the conduction band is represented by a three valley model. Examples include Si, Ge and GaAs.
07 Jul 2004 | Online Presentations | Contributor(s): Mark Lundstrom
In non-specialist language, this talk introduces CMOS technology used for modern electronics. Beginning with an explanation of "CMOS," the speaker relates basic system considerations of transistor design and identifies future challenges for CMOS electronics. Anyone with an elementary understanding of transistors will benefit from this presentation.
14 Dec 2006 | Tools | Contributor(s): Gyungseon Seol, Youngki Yoon, James K Fodor, Jing Guo, Akira Matsudaira, Diego Kienle, Gengchiau Liang, Gerhard Klimeck, Mark Lundstrom, Ahmed Ibrahim Saeed
This tool simulates E-k and DOS of CNTs and graphene nanoribbons.
13 Mar 2006 | Tools | Contributor(s): Neophytos Neophytou, Shaikh S. Ahmed, Eric Polizzi, Gerhard Klimeck, Mark Lundstrom
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
Colloquium on Graphene Physics and Devices
22 Sep 2009 | Courses | Contributor(s): Joerg Appenzeller, Supriyo Datta, Mark Lundstrom
This short course introduces students to graphene as a fascinating research topic as well as to develop their skill in problem solving using the tools and techniques of electronics from the bottom up.
Cylindrical CNT MOSFET Simulator
22 Jul 2008 | Tools | Contributor(s): Gloria Wahyu Budiman, Yunfei Gao, Xufeng Wang, Siyu Koswatta, Mark Lundstrom
Simulate 2-D electrons transport in CNTFET
Device Options and Trade-offs for 5 nm CMOS Technology Seminar Series
05 Oct 2015 | Series | Contributor(s): Mark Lundstrom
Today's CMOS technology is so-called 14-nm technology. 10 nm technology development is well underway, and 7 nm has begun. It will soon be time to select a technology for the 5 nm node. To help understand the device options, what each on promises, what the challenges and trade-offs are, NEEDS has invited a group of leading experts to share their views with.
ECE 612 Introductory Lecture
10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Introductory Lecture (Fall 06)
08 Aug 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 10: The Ballistic MOSFET
18 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances
25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom
Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.
ECE 612 Lecture 11: Effective Mobility
20 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
1) Review of mobility,
3) Physics of the effective mobility,
4) Measuring effective mobility,