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What's the HUBbub? - Panel Discussion
31 Jan 2011 | Online Presentations | Contributor(s): Michael McLennan, Mark Lundstrom, Rudi Eigenmann
WALLA Lecture: Electronics, Microelectronics and Nanoelectronics
06 May 2010 | Online Presentations | Contributor(s): Mark Lundstrom
The 21st century is the age of nanoelectronics and will be transformed by increasingly powerful electronic products. At the same time, new applications that apply nanoelectronics to challenges in health, the environment, and energy will be increasingly important. This talk is an introduction to...
Unified View of Electron and Phonon Transport
10 Nov 2015 | Online Presentations | Contributor(s): Mark Lundstrom, Jesse Maassen
A simple, unified view of electron and phonon transport is presented. Similarities and differences are identified, and new insights that come from addressing phonon transport from an electron transport perspective will be discussed.
3.0 out of 5 stars
04 Aug 2004 | Online Presentations | Contributor(s): Mark Lundstrom
The transistor is the basic element of electronic systems. The integrated circuits inside today's personal computers, cell phones, PDA's, etc., contain hundreds of millions of transistors on a chip of silicon about 2 cm on a side. Each technology generation, engineers shrink the size of...
Towards Multi-Scale Modeling of Carbon Nanotube Transistors
0.0 out of 5 stars
20 Sep 2006 | Papers | Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram
Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube...
25 Jul 2010 | Online Presentations | Contributor(s): Mark Lundstrom
his talk is an undergraduate level introduction to the field. After a brief discussion of applications, the physics of the Peltier effect is described, and the Figure of Merit (FOM), ZT, which controls the efficiency of a thermoelectric refrigerator or electric power generator, is discussed. The...
Theory of Ballistic Nanotransistors
27 Nov 2002 | Papers | Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to...
The NEEDS Initiative: Devices, Circuits, and Systems
07 Jan 2016 | Presentation Materials | Contributor(s): Mark Lundstrom
This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015.This presentation provides an overview of the NEEDS initiative, which is funded by the U.S. National Science Foundation and by the Semiconductor Research Corporation. The overarching...
The Nano-MOSFET: A brief introduction
17 Aug 2007 | Online Presentations | Contributor(s): Mark Lundstrom
MOSFET channel lengths are now well below 100nm, and getting smaller, but MOSFETs are still modeled and understood much as they were 30 years ago. Seminal work in the 1960’s laid the foundation for our understanding of the MOSFET, but traditional approaches are based on concepts that lose...
The MVS Nanotransistor Model: A Primer
26 Nov 2014 | Online Presentations | Contributor(s): Mark Lundstrom
In this talk, I will present a gentle introduction to the MVS model. I’ll show how the basic equations of the model can be obtained by using a traditional approach to MOSFETs. I’ll then indicate how the parameters in this traditional model must be re-interpreted in order to capture...
TAG Solar Cell Model (p-i-n thin film) 1.0.1
25 Jul 2014 | Compact Models | Contributor(s): Sourabh Dongaonkar, Xingshu Sun, Mark Lundstrom, Muhammad A. Alam
The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.
TAG Solar Cell Model (p-i-n thin film) 1.0.0
02 Apr 2014 | Compact Models | Contributor(s): Sourabh Dongaonkar, Xingshu Sun, Mark Lundstrom, Muhammad A. Alam
A new Version of this resource has been released. Please see TAG Solar Cell Model (p-i-n thin film) 1.0.1. The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.
Solar Cells Lecture 2: Physics of Crystalline Solar Cells
4.5 out of 5 stars
19 Aug 2011 | Online Presentations | Contributor(s): Mark Lundstrom
Solar cell performance is determined by generation and recombination of electron-hole pairs. This tutorial focussing on recombination losses in crystalline silicon solar cells under short-circuit and open-circuit conditions.
Solar Cells Lecture 1: Introduction to Photovoltaics
An introduction to solar cells covering the basics of PN junctions, optical absorption, and IV characteristics. Key technology options and economic considers are briefly presented.
Solar Cell Fundamentals
5.0 out of 5 stars
19 Aug 2011 | Courses | Contributor(s): Mark Lundstrom, J. L. Gray, Muhammad A. Alam
The modern solar cell was invented at Bell Labs in 1954 and is currently receiving renewed attention as a potential contribution to addressing the world's energy challenge. This set of five tutorials is an introduction to solar cell technology fundamentals. It begins with a broad overview of...
Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches
28 Sep 2006 | Papers | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim- ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon- on-insulator transistors in the ballistic limit. The proposed simulation scheme, which solves the...
Simple Theory of the Ballistic MOSFET
11 Oct 2005 | Online Presentations | Contributor(s): Mark Lundstrom
Silicon nanoelectronics has become silicon nanoelectronics, but we still analyze, design, and think about MOSFETs in more or less in the same way that we did 30 years ago. In this talk, I will describe a simple analysis of the ballistic MOSFET. No MOSFET is truly ballistic, but approaching this...
Semiconductor Device Theory Exercises
30 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck, Mark Lundstrom
This collection of problems should help the students to better understand Semiconductor Device Physics on a fundamental and more complex level. Crystal lattices and Miller indiciesFrom 1 well to 2 wells to 5 wells to periodic potentialsPeriodic potentials and bandstructureBandstructure...
30 Mar 2006 | Tools | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng
SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.
Quick Review of Semiconductor Fundamentals
18 Dec 2015 | Online Presentations | Contributor(s): Mark Lundstrom
This lecture quickly summarizes some important semiconductor fundamentals. For those acquainted with semiconductors, it may be useful as a brief refresher. For those just getting started with semiconductors, my hope is that this lecture provides just enough understanding to allow you to begin...
Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional understanding of electronic devices needs to be complemented with a new perspective that begins...
Physics of Nanoscale MOSFETs
3.5 out of 5 stars
26 Aug 2008 | Courses | Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of...
PETE : Purdue Emerging Technology Evaluator
26 Jun 2007 | Tools | Contributor(s): Arijit Raychowdhury, Charles Augustine, Yunfei Gao, Mark Lundstrom, Kaushik Roy
Estimate circuit level performance and power of novel devices
Panel Discussion on Nanotechnology Research Beyond 2025
05 Jan 2016 | Online Presentations | Contributor(s): Mark Lundstrom, Roger T. Howe
Timothy Sands, Virginia Tech; Roger Howe, Stanford University; Mark Lundstrom, Purdue University
Openning Remarks: The NEEDS Program
28 Sep 2017 | Online Presentations | Contributor(s): Mark Lundstrom