Opening Remarks: Excellence in Computer Simulation
0.0 out of 5 stars
03 Jan 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Opening remarks for the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.
Opening Remarks & Transistors in the 1950s
02 Feb 2023 | Online Presentations | Contributor(s): Mark Lundstrom
Opening Remarks by Mark Lundstrom and recorded message by US Senator Todd Young.
NSU Lectures on Low-Field Transport: Lecture 0
06 Jul 2010 | Online Presentations | Contributor(s): Mohammad Mayy, Mark Lundstrom
A clear understanding of near equilibrium carrier transport is essential for working on materials and devices. The field is an old one that has been treated in classic textbook, but with the rapid development of nanoscience and technology, the field is changing. An understanding of transport in...
NSF NCN Overview
26 Jul 2004 | Online Presentations | Contributor(s): Mark Lundstrom
Notes on the Ballistic MOSFET
08 Oct 2005 | Papers | Contributor(s): Mark Lundstrom
When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance between scattering events (the so-called mean-free-path, λ) is much shorter than the device. When...
Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
24 Oct 2012 | Teaching Materials | Contributor(s): Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 â 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...
Notes on Fermi-Dirac Integrals (4th Edition)
23 Sep 2008 | Papers | Contributor(s): raseong kim, Xufeng Wang, Mark Lundstrom
Fermi-Dirac integrals appear frequently in semiconductor problems, so an understanding of their properties is essential. The purpose of these notes is to collect in one place, some basic information about Fermi-Dirac integrals and their properties.We also present Matlab functions (in a zipped...
NEEDS: Goals, Status, and Plans
18 Mar 2016 | Presentation Materials | Contributor(s): Mark Lundstrom
This is the opening talk for 2016 MAPP workshop at U.C. Berkeley. It gives an overview of the NEEDS node in 2016.
NEEDS Workshop on Compact Modeling
19 Jun 2013 | Workshops | Contributor(s): Mark Lundstrom, Jaijeet Roychowdhury
Advanced inresearch promise a new era of electronics â one that harnesses the capabilities of novel nano-Ââengineered materials and devices either alone or in conjunction with powerful silicon platforms. Compact models connect basic work on materials and device physics to circuits and systems....
NEEDS UC Berkeley Workshop
5.0 out of 5 stars
25 Mar 2014 | Workshops | Contributor(s): Jaijeet Roychowdhury, Mark Lundstrom
This workshop presented a tutorial introduction to the Matlab-based compact model development platform being developed at UC Berkeley.
NEEDS Seminar Series
09 Jul 2013 | Series | Contributor(s): Mark Lundstrom, NEEDS Node
NEEDS is an initiative supported by the National Science Foundation and the Semiconductor Research Corporation with a mission to develop the critical missing link needed to transform nanoelectronic materials and device research into electronic systems – physics-based compact models for...
NEEDS Introduction
19 Jun 2013 | Online Presentations | Contributor(s): Mark Lundstrom
NEEDS is an initiative supported by the National Science Foundation and the Semiconductor Research Corporation with a mission to develop the critical missing link needed to transform nanoelectronic materials and device research into electronic systems â physics-based compact models for...
Near-Equilibrium Transport: Fundamentals and Applications
28 Jul 2011 | Courses | Contributor(s): Mark Lundstrom
Engineers and scientists working on electronic materials and devices need a working knowledge of "near-equilibrium" (also called "linear" or "low-field") transport. The term "working knowledge" means understanding how to use theory in practice. Measurements...
Near-Equilibrium Transport Fundamentals and Applications
30 Jan 2022 | Papers | Contributor(s): Mark Lundstrom, Changwook Jeong
These lectures are designed to introduce students to the fundamentals of carrier transport in nano-devices using a novel, “bottom up approach” that agrees with traditional methods when devices are large, but which also works for nano-devices.
NCN, nanoHUB, HUBzero: cyberinfrastructure for nanotechnology
10 Feb 2011 | Online Presentations | Contributor(s): Mark Lundstrom
Presentation made at the Workshop to Develop the Global Nanotechnology Network, Grenoble, France.
NCN Overview
06 Apr 2005 | Online Presentations | Contributor(s): Mark Lundstrom
This presentation is an overview of the Network for Computational Nanotechnology (NCN) presented at the first NCN Student Conference in April 2005. It is intended to give students an understanding of the NCN's vision and mission.
Nanotechnology 501 Lecture Series
3.5 out of 5 stars
22 Feb 2005 | Series | Contributor(s): Gerhard Klimeck (editor), Mark Lundstrom (editor), Joseph M. Cychosz (editor)
Welcome to Nanotechnology 501, a series of lectures designed to provide an introduction to nanotechnology. This series is similar to our popular lecture series Nanotechnology 101, but it is directed at the graduate students and professionals.
Nanoscale Transistors: Scientific Overview
19 Jul 2012 | Online Presentations | Contributor(s): Mark Lundstrom
Nanoscale Transistors: Advanced VLSI Devices (Introductory Lecture)
20 Apr 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Welcome to the ECE 612 Introductory/Overview lecture. This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies.
Nanoscale Transistors Lecture 9: Scattering and Transmission
Nanoscale Transistors Lecture 8: Connection to Traditional Model
Nanoscale Transistors Lecture 7: Comparison to Experimental Results
Nanoscale Transistors Lecture 6: Ballistic Model
Nanoscale Transistors Lecture 5: Transport - ballistic, diffusive, non-local, and quantum
Nanoscale Transistors Lecture 4: MOS Electrostatics