Mark Lundstrom

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Resources (1-25 of 274)

  1. Nanotechnology 501 Lecture Series

    5.0 out of 5 stars 

    22 Feb 2005 | Series | Contributor(s): Gerhard Klimeck (editor), Mark Lundstrom (editor), Joseph M. Cychosz (editor)

    Welcome to Nanotechnology 501, a series of lectures designed to provide an introduction to nanotechnology. This series is similar to our popular lecture series Nanotechnology 101, but it is directed at the graduate students and professionals.

  2. ECE 612 Nanoscale Transistors (Fall 2006)

    5.0 out of 5 stars 

    08 Aug 2006 | Courses | Contributor(s): Mark Lundstrom

    Additional material related to the topics discussed in this course course is available at https://nanohub.org/courses/NT Nanoscale Transistors is a five-week online course that develops a unified framework for understanding essential physics of nanoscale transistors, their important applications, and trends and directions. Registration now open Please Note: An updated version of this course, for Fall 2008, is available. This course examines the...

  3. ECE 612: Nanoscale Transistors (Fall 2008)

    5.0 out of 5 stars 

    27 Aug 2008 | Courses | Contributor(s): Mark Lundstrom

    Additional material related to the topics discussed in this course course is available at https://nanohub.org/courses/NT   Fall 2008 This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies. The course consists of three parts. Part 1 treats silicon MOS and MOSFET fundamentals as well as second order effects...

  4. 2008 NCN@Purdue Summer School: Electronics from the Bottom Up

    0.0 out of 5 stars 

    26 Aug 2008 | Workshops | Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom

    Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two contacts. For carrier transport, it means beginning at the nanoscale where ballistic transport, atomistic effects, and stochastic effects dominate. For MOSFETs, it means beginning with the “ultimate” MOSFET. Electronics from the Bottom Up does not mean ab initio numerical simulations – it means beginning with concepts and approaches that are both simple and sound at the nanoscale rather than extrapolated from the microscale.

  5. 2009 NCN@Purdue Summer School: Electronics from the Bottom Up

    22 Sep 2009 | Workshops | Contributor(s): Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller

    The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.

  6. ECE 656: Electronic Transport in Semiconductors (Fall 2009)

    26 Aug 2009 | Courses | Contributor(s): Mark Lundstrom

    This course develops a basic understanding of the theory of charge carrier transport in semiconductors and semiconductor devices and an ability to apply it to the anslysis of experiments and devices.

  7. Solar Cell Fundamentals

    19 Aug 2011 | Courses | Contributor(s): Mark Lundstrom, J. L. Gray, Muhammad A. Alam

    The modern solar cell was invented at Bell Labs in 1954 and is currently receiving renewed attention as a potential contribution to addressing the world's energy challenge. This set of five tutorials is an introduction to solar cell technology fundamentals. It begins with a broad overview of solar cells and continues with a discussion of carrier generation and recombination in silicon solar cells. The tutorials continue with an overview of solar cell modeling and …

  8. Colloquium on Graphene Physics and Devices

    22 Sep 2009 | Courses | Contributor(s): Joerg Appenzeller, Supriyo Datta, Mark Lundstrom

    This short course introduces students to graphene as a fascinating research topic as well as to develop their skill in problem solving using the tools and techniques of electronics from the bottom up.

  9. ECE 656: Electronic Transport in Semiconductors (Fall 2011)

    29 Aug 2011 | Courses | Contributor(s): Mark Lundstrom

    This course is about how charge flows in semiconductors with an emphasis on transport in nanoscale devices. The objective is to develop a broad understanding of basic concepts. The course is designed for those who work on electronic materials and devices – whether they are experimentalists, device physicists, or computational experts.

  10. Physics of Nanoscale MOSFETs

    3.5 out of 5 stars 

    26 Aug 2008 | Courses | Contributor(s): Mark Lundstrom

    Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of nanoscale dimensions. lecture 1 reviews traditional MOSFET theory, and Lecture 2 presents the new approach in its simplest form. Lectures 3A and 3B describe the mathematical treatment of ballistic …

  11. A Primer on Semiconductor Device Simulation

    4.5 out of 5 stars 

    23 Jan 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    Computer simulation is now an essential tool for the research and development of semiconductor processes and devices, but to use a simulation tool intelligently, one must know what's "under the hood." This talk is a tutorial introduction designed for someone using semiconductor device simulation for the first time. After reviewing the semiconductor equations, I will briefly describe how one solves them "exactly" on a computer. I'll then discuss an example device simulation program and conclude with some thoughts about how to effectively use simulation in practice.

  12. ECE 612 Lecture 16: MOSFET Leakage

    0.0 out of 5 stars 

    31 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) MOSFET leakage components, 2) Band to band tunneling, 3) Gate-induced drain leakage, 4) Gate leakage, 5) Scaling and ITRS, 6) Summary.

  13. Low Bias Transport in Graphene: An Introduction (lecture notes)

    22 Sep 2009 | Presentation Materials | Contributor(s): Mark Lundstrom, Tony Low, Dionisis Berdebes

    These notes complement a lecture with the same title presented by Mark Lundstrom and Dionisis Berdebes, at the NCN@Purdue Summer School, July 20-24, 2009.

  14. CMOS Nanotechnology

    4.5 out of 5 stars 

    07 Jul 2004 | Online Presentations | Contributor(s): Mark Lundstrom

    In non-specialist language, this talk introduces CMOS technology used for modern electronics. Beginning with an explanation of "CMOS," the speaker relates basic system considerations of transistor design and identifies future challenges for CMOS electronics. Anyone with an elementary understanding of transistors will benefit from this presentation.

  15. Solar Cells Lecture 2: Physics of Crystalline Solar Cells

    19 Aug 2011 | Online Presentations | Contributor(s): Mark Lundstrom

    Solar cell performance is determined by generation and recombination of electron-hole pairs. This tutorial focussing on recombination losses in crystalline silicon solar cells under short-circuit and open-circuit conditions.

  16. Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up

    0.0 out of 5 stars 

    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional understanding of electronic devices needs to be complemented with a new perspective that begins from the nanoscale. My objectives in this talk are: 1) to describe a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of nanoscale dimensions, and 2) to introduce the “bottom up” approach, a way of understanding nanoscale electronics very generally. This talk will provide a starting point for those interested in exploring the electronics from the bottom up approach through the resources of nanoHUB.org.

  17. Solar Cells Lecture 1: Introduction to Photovoltaics

    19 Aug 2011 | Online Presentations | Contributor(s): Mark Lundstrom

    An introduction to solar cells covering the basics of PN junctions, optical absorption, and IV characteristics. Key technology options and economic considers are briefly presented.

  18. Band Structure Lab

    5.0 out of 5 stars 

    19 May 2006 | Tools | Contributor(s): Samik Mukherjee, Kai Miao, Abhijeet Paul, Neophytos Neophytou, Raseong Kim, Junzhe Geng, Michael Povolotskyi, Tillmann Christoph Kubis, Arvind Ajoy, Bozidar Novakovic, James Fonseca, Hesameddin Ilatikhameneh, Sebastian Steiger, Michael McLennan, Mark Lundstrom, Gerhard Klimeck

    Computes the electronic and phonon structure of various materials in the spatial configuration of bulk , quantum wells, and wires

  19. Near-Equilibrium Transport: Fundamentals and Applications

    28 Jul 2011 | Courses | Contributor(s): Mark Lundstrom

    Engineers and scientists working on electronic materials and devices need a working knowledge of "near-equilibrium" (also called "linear" or "low-field") transport. The term "working knowledge" means understanding how to use theory in practice. Measurements of resistivity, conductivity, mobility, thermoelectric parameters as well as Hall effect measurements are commonly used to characterize electronic materials. Thermoelectric effects are the basis for important devices, and …

  20. Simple Theory of the Ballistic MOSFET

    5.0 out of 5 stars 

    11 Oct 2005 | Online Presentations | Contributor(s): Mark Lundstrom

    Silicon nanoelectronics has become silicon nanoelectronics, but we still analyze, design, and think about MOSFETs in more or less in the same way that we did 30 years ago. In this talk, I will describe a simple analysis of the ballistic MOSFET. No MOSFET is truly ballistic, but approaching this familiar device from a different perspective can be useful. The talk will introduce a very simple, general model, then apply it to the planar MOSFET. My objective is to describe the theory in enough detail so that you can intelligently use the program, FETToy, or write a more general program yourself.

  21. Lecture 1: Review of MOSFET Fundamentals

    4.0 out of 5 stars 

    26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the meaning of ballistic transport is also included.

  22. ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances

    0.0 out of 5 stars 

    02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

  23. CNTbands

    4.5 out of 5 stars 

    14 Dec 2006 | Tools | Contributor(s): Gyungseon Seol, Youngki Yoon, James K Fodor, Jing Guo, Akira Matsudaira, Diego Kienle, Gengchiau Liang, Gerhard Klimeck, Mark Lundstrom, Ahmed Ibrahim Saeed

    This tool simulates E-k and DOS of CNTs and graphene nanoribbons.

  24. ECE 612 Lecture 2: 1D MOS Electrostatics II

    0.0 out of 5 stars 

    09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review, 2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultra-thin body), 5) Summary.

  25. NEEDS Seminar Series

    09 Jul 2013 | Series | Contributor(s): Mark Lundstrom, NEEDS Node

    NEEDS is an initiative supported by the National Science Foundation and the Semiconductor Research Corporation with a mission to develop the critical missing link needed to transform nanoelectronic materials and device research into electronic systems – physics-based compact models for nano-devices that are accurate, robust, fast, and suitable for use by technology-developers and designers in SPICE-based, design environments.