
Nanotechnology 501 Lecture Series
22 Feb 2005  Series  Contributor(s): Gerhard Klimeck (editor), Mark Lundstrom (editor), Joseph M. Cychosz (editor)
Welcome to Nanotechnology 501, a series of lectures designed to provide an introduction to nanotechnology. This series is similar to our popular lecture series Nanotechnology 101, but it is directed at the graduate students and professionals.

ECE 612 Nanoscale Transistors (Fall 2006)
08 Aug 2006  Courses  Contributor(s): Mark Lundstrom
Additional material related to the topics discussed in this course course is available at https://nanohub.org/courses/NT
Nanoscale Transistors is a fiveweek online course that develops a unified framework for understanding essential physics of nanoscale transistors, their important applications, and trends and directions. Registration now open
Please Note: An updated version of this course, for Fall 2008, is available.
This course examines the...

ECE 612: Nanoscale Transistors (Fall 2008)
27 Aug 2008  Courses  Contributor(s): Mark Lundstrom
Additional material related to the topics discussed in this course course is available at https://nanohub.org/courses/NT
Fall 2008
This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies. The course consists of three parts. Part 1 treats silicon MOS and MOSFET fundamentals as well as second order effects...

2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008  Workshops  Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottomup perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two contacts. For carrier transport, it means beginning at the nanoscale where ballistic transport, atomistic effects, and stochastic effects dominate. For MOSFETs, it means beginning with the “ultimate” MOSFET. Electronics from the Bottom Up does not mean ab initio numerical simulations – it means beginning with concepts and approaches that are both simple and sound at the nanoscale rather than extrapolated from the microscale.

2009 NCN@Purdue Summer School: Electronics from the Bottom Up
22 Sep 2009  Workshops  Contributor(s): Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller
The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.

ECE 656: Electronic Transport in Semiconductors (Fall 2009)
26 Aug 2009  Courses  Contributor(s): Mark Lundstrom
This course develops a basic understanding of the theory of charge carrier transport in semiconductors and semiconductor devices and an ability to apply it to the anslysis of experiments and devices.

Colloquium on Graphene Physics and Devices
22 Sep 2009  Courses  Contributor(s): Joerg Appenzeller, Supriyo Datta, Mark Lundstrom
This short course introduces students to graphene as a fascinating research topic as well as to develop their skill in problem solving using the tools and techniques of electronics from the bottom up.

Solar Cell Fundamentals
19 Aug 2011  Courses  Contributor(s): Mark Lundstrom, J. L. Gray, Muhammad A. Alam
The modern solar cell was invented at Bell Labs in 1954 and is currently receiving renewed attention as a potential contribution to addressing the world's energy challenge. This set of five tutorials is an introduction to solar cell technology fundamentals. It begins with a broad overview of solar cells and continues with a discussion of carrier generation and recombination in silicon solar cells. The tutorials continue with an overview of solar cell modeling and …

ECE 656: Electronic Transport in Semiconductors (Fall 2011)
29 Aug 2011  Courses  Contributor(s): Mark Lundstrom
This course is about how charge flows in semiconductors with an emphasis on transport in nanoscale devices. The objective is to develop a broad understanding of basic concepts. The course is designed for those who work on electronic materials and devices – whether they are experimentalists, device physicists, or computational experts.

Physics of Nanoscale MOSFETs
26 Aug 2008  Courses  Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of nanoscale dimensions. lecture 1 reviews traditional MOSFET theory, and Lecture 2 presents the new approach in its simplest form. Lectures 3A and 3B describe the mathematical treatment of ballistic …

A Primer on Semiconductor Device Simulation
23 Jan 2006  Online Presentations  Contributor(s): Mark Lundstrom
Computer simulation is now an essential tool for the research and development of semiconductor processes and devices, but to use a simulation
tool intelligently, one must know what's "under the hood." This talk
is a tutorial introduction designed for someone using semiconductor
device simulation for the first time. After reviewing the
semiconductor equations, I will briefly describe how one solves them
"exactly" on a computer. I'll then discuss an example device
simulation program and conclude with some thoughts about how to
effectively use simulation in practice.

ECE 612 Lecture 16: MOSFET Leakage
31 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) MOSFET leakage components,
2) Band to band tunneling,
3) Gateinduced drain leakage,
4) Gate leakage,
5) Scaling and ITRS,
6) Summary.

CMOS Nanotechnology
07 Jul 2004  Online Presentations  Contributor(s): Mark Lundstrom
In nonspecialist language, this talk introduces CMOS technology used for modern electronics. Beginning with an explanation of "CMOS," the speaker relates basic system considerations of transistor design and identifies future challenges for CMOS electronics. Anyone with an elementary understanding of transistors will benefit from this presentation.

Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional understanding of electronic devices needs to be complemented with a new perspective that begins from the nanoscale. My objectives in this talk are: 1) to describe a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of nanoscale dimensions, and 2) to introduce the “bottom up” approach, a way of understanding nanoscale electronics very generally. This talk will provide a starting point for those interested in exploring the electronics from the bottom up approach through the resources of nanoHUB.org.

Low Bias Transport in Graphene: An Introduction (lecture notes)
22 Sep 2009  Presentation Materials  Contributor(s): Mark Lundstrom, Tony Low, Dionisis Berdebes
These notes complement a lecture with the same title presented by Mark Lundstrom and Dionisis Berdebes, at the NCN@Purdue Summer School, July 2024, 2009.

Band Structure Lab
19 May 2006  Tools  Contributor(s): Samik Mukherjee, Kai Miao, Abhijeet Paul, Neophytos Neophytou, Raseong Kim, Junzhe Geng, Michael Povolotskyi, Tillmann Christoph Kubis, Arvind Ajoy, Bozidar Novakovic, James Fonseca, Hesameddin Ilatikhameneh, Sebastian Steiger, Michael McLennan, Mark Lundstrom, Gerhard Klimeck
Computes the electronic and phonon structure of various materials in the spatial configuration of bulk , quantum wells, and wires

Solar Cells Lecture 1: Introduction to Photovoltaics
19 Aug 2011  Online Presentations  Contributor(s): Mark Lundstrom
An introduction to solar cells covering the basics of PN junctions,
optical absorption, and IV characteristics. Key technology options and economic considers are briefly presented.

Solar Cells Lecture 2: Physics of Crystalline Solar Cells
19 Aug 2011  Online Presentations  Contributor(s): Mark Lundstrom
Solar cell performance is determined by generation and recombination of electronhole pairs. This tutorial focussing on recombination losses in crystalline silicon solar cells under shortcircuit and opencircuit conditions.

Simple Theory of the Ballistic MOSFET
11 Oct 2005  Online Presentations  Contributor(s): Mark Lundstrom
Silicon nanoelectronics has become silicon nanoelectronics, but we
still analyze, design, and think about MOSFETs in more or less in the
same way that we did 30 years ago. In this talk, I will describe a
simple analysis of the ballistic MOSFET. No MOSFET is truly ballistic,
but approaching this familiar device from a different perspective can
be useful. The talk will introduce a very simple, general model, then
apply it to the planar MOSFET. My objective is to describe the theory
in enough detail so that you can intelligently use the program,
FETToy, or write a more general program yourself.

NearEquilibrium Transport: Fundamentals and Applications
28 Jul 2011  Courses  Contributor(s): Mark Lundstrom
Engineers and scientists working on electronic materials and devices
need a working knowledge of "nearequilibrium" (also called "linear"
or "lowfield") transport. The term "working knowledge" means
understanding how to use theory in practice. Measurements of
resistivity, conductivity, mobility, thermoelectric parameters as well
as Hall effect measurements are commonly used to characterize
electronic materials. Thermoelectric effects are the basis for
important devices, and …

ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances
02 Oct 2006  Online Presentations  Contributor(s): Mark Lundstrom

Lecture 1: Review of MOSFET Fundamentals
26 Aug 2008  Online Presentations  Contributor(s): Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (driftdiffusion) approach and the meaning of ballistic transport is also included.

CNTbands
14 Dec 2006  Tools  Contributor(s): Gyungseon Seol, Youngki Yoon, James K Fodor, Jing Guo, Akira Matsudaira, Diego Kienle, Gengchiau Liang, Gerhard Klimeck, Mark Lundstrom, Ahmed Ibrahim Saeed
This tool simulates Ek and DOS of CNTs and graphene nanoribbons.

ECE 612 Lecture 2: 1D MOS Electrostatics II
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review,
2) ‘Exact’ solution (bulk),
3) Approximate solution (bulk),
4) Approximate solution (ultrathin body),
5) Summary.

Moore's Law Forever?
13 Jul 2005  Online Presentations  Contributor(s): Mark Lundstrom
This talk covers the big technological changes in the 20th and 21st century that were correctly predicted by Gordon Moore in 1965. Moore's Law states that the number of transistors on a silicon chip doubles every technology generation. In 1960s terms that meant every 12 months and currently this means every 1824 months. This talk explores the challenges of doubling transistors on chips and some new technologies examined by researchers.