ECE 656 Lecture 3: Density of States
07 Sep 2011 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:Density of statesExample: grapheneDiscussionSummary
Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
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10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional understanding of electronic devices needs to be complemented with a new perspective that begins...
ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances
02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
24 Oct 2012 | Teaching Materials | Contributor(s): Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...
ECE 612 Lecture 2: 1D MOS Electrostatics II
09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Review,2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultra-thin body), 5) Summary.
ECE 612 Lecture 12: 2D Electrostatics
28 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:1) Consequences of 2D electrostatics,2) 2D Poisson equation,3) Charge sharing model,4) Barrier lowering,5) 2D capacitor model,6) Geometric screening length,7) Discussion,8) Summary.
FETToy
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14 Feb 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
Quick Review of Semiconductor Fundamentals
18 Dec 2015 | Online Presentations | Contributor(s): Mark Lundstrom
This lecture quickly summarizes some important semiconductor fundamentals. For those acquainted with semiconductors, it may be useful as a brief refresher. For those just getting started with semiconductors, my hope is that this lecture provides just enough understanding to allow you to begin...
A Primer on Semiconductor Fundamentals
10 Jan 2016 | Teaching Materials | Contributor(s): Mark Lundstrom
This primer quickly summarize some important semiconductor fundamentals. For those acquainted with semiconductors, this may be useful as a brief refresher. For those just getting started with semiconductors, my hope is that this primer provides just enough understanding to allow you to begin...
ECE 656 Lecture 1: Bandstructure Review
26 Aug 2009 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:Bandstructure in bulk semiconductorsQuantum confinementSummary
ECE 612 Introductory Lecture
Excellence in Computer Simulation
19 Dec 2007 | Workshops | Contributor(s): Mark Lundstrom, Jeffrey B. Neaton, Jeffrey C Grossman
Computational science is frequently labeled as a third branch of science - equal in standing with theory and experiment, and computational engineering is now an essential component of technology development and manufacturing. The successes of computational science and engineering (CSE) over the...
ECE 612 Lecture 3: MOS Capacitors
Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.
Moore's Law Forever?
13 Jul 2005 | Online Presentations | Contributor(s): Mark Lundstrom
This talk covers the big technological changes in the 20th and 21st century that were correctly predicted by Gordon Moore in 1965. Moore's Law states that the number of transistors on a silicon chip doubles every technology generation. In 1960s terms that meant every 12 months and currently...
Homework for PN Junctions: Depletion Approximation (ECE 305)
06 Jan 2006 | Teaching Materials | Contributor(s): Mark Lundstrom, David Janes
This homework assignment is part of ECE 305 "Semiconductor Device Fundamentals" (Purdue University). It contains 7 problems which lead students through a comparison of the depletion approximation and the exact analysis of a PN junction diode.
ECE 612 Lecture 1: 1D MOS Electrostatics I
Outline: 1) Review of some fundamentals,2) Identify next steps.
ECE 612 Lecture 28: Overview of SOI Technology
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30 Nov 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 4: Polysilicon Gates/QM Effects
12 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Review, 2) Workfunctionof poly gates,3) CV with poly depletion,4) Quantum mechanics and VT,5) Quantum mechanics and C,6) Summary.
Nanoelectronic Devices, With an Introduction to Spintronics
09 Sep 2010 | Courses | Contributor(s): Supriyo Datta, Mark Lundstrom
Nanoelectronic devices are at the heart of today's powerful computers and are also of great interest for many emerging applications including energy conversion, sensing and alternative computing paradigms. Our objective, however, is not to discuss specific devices or...
Introduction: Physics of Nanoscale MOSFETs
26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Lecture 4: Thermoelectric Effects-Physical Approach
28 Jul 2011 | Online Presentations | Contributor(s): Mark Lundstrom
The effect of temperature gradients on current flow and how electrical currents produce heat currents are discussed.
ECE 612 Lecture 25: SOI Electrostatics
08 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:1. Introduction,2. General solution, 3. VTF vs. VGB,4. Subthreshold slope,5. Double gate (DG) SOI,6. Recap,7. Discussion,8. Summary.
ECE 612 Lecture 23: RF CMOS
02 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Introduction,2) Small signal model,3) Transconductance,4) Self-gain,5) Gain bandwidth product,6) Unity power gain,7) Noise, mismatch, linearity…,8) Examples
ECE 612 Lecture 5: MOSFET IV: Square law and bulk charge
07 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Introduction,2) Square law theory,3) PN junction effects on MOSFETs,4) Bulk charge theory (exact),5) Summary.
Ballistic Nanotransistors - Learning Module
07 Dec 2005 | Series | Contributor(s): Mark Lundstrom
This resource is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new insights into the performance and limits of nanoscale MOSFETs. The materials presented below introduces the...